Device performance improvement of InGaP/InGaAs doped-channel FETs

IEEE Electron Device Letters

Volumn 26, Issue 12, 2005, Pages 861-863

  Chien, Feng Tso ^a   Yin, Jin Mu ^a   Chiu, Hsien Chin ^b   Chan, Yi Jen ^c  

^a FENG CHIA UNIVERSITY   (Taiwan)

^b CHANG GUNG UNIVERSITY   (Taiwan)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

Doped channel field effect transistors (DCFETs); InGaP InGaAs; Ohmic recess; Source and drain resistance

Indexed keywords

ELECTRIC RESISTANCE; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

DOPED-CHANNEL FIELD-EFFECT TRANSISTORS (DCFETS); OHMIC RECESS; PARASITIC SOURCE RESISTANCES; SOURCE AND DRAIN RESISTANCE;

FIELD EFFECT TRANSISTORS;

EID: 29244433078     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.859644     Document Type: Article

References (13)

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