RIE gate-recessed (Al 0.3 Ga 0.7) 0.5In 0.5 P/InGaAs double doped-channel FETs using CHF 3+ BCl 3 mixing plasma

IEEE Electron Device Letters

Volumn 22, Issue 4, 2001, Pages 170-172

  Yang, Shih Cheng ^a,b   Chiu, Hsien Chin ^b   Chien, Feng Tso ^a,b   Chan, Yi Jen ^a,b   Kuo, Jenn Ming ^a,c  

^a IEEE   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^c NOKIA RESEARCH CENTER   (United States)

Author keywords

AlGaInP InGaAs; Heterostructure FETs; Reactive ion etching

Indexed keywords

GATE-RECESS;

CHANNEL CAPACITY; FABRICATION; HETEROJUNCTIONS; MICROWAVES; PLASMA APPLICATIONS; REACTIVE ION ETCHING; SEMICONDUCTOR DOPING;

GATES (TRANSISTOR);

EID: 0035307820     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.915602     Document Type: Article

References (8)

1. 0.5P (0 ≤ X ≤ 1) lattice matched to GaAs
2. 0.5P HEMT's for high-efficiency low-voltage power amplifiers: Deign, fabrication, and device results
3. Interface properties for GaAs/InGaAlP heterojunctions by the capacitance-voltage profiling technique
4. y for precise control of HJFET threshold
5. 0.5P quaternary compounds using chlorine and fluorine mixing plasma
6. 3 plasma
7. Microwave power performance comparison between single and dual doped-channel design in Al-GaAs/InGaAs HFET's
8. 5 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band application