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Volumn 10, Issue 7, 2000, Pages 276-278

A Broadband and Miniaturized V-Band PHEMT Frequency Doubler

Author keywords

3 D MMIC technology; Broadband; circuit theory and design; frequency doubler; rat race hybrid

Indexed keywords

BROADBAND AMPLIFIERS; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; MICROWAVE ISOLATORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; TRANSCEIVERS;

EID: 0034226663     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.856987     Document Type: Article
Times cited : (48)

References (6)
  • 1
    • 0029532707 scopus 로고
    • An MMIC chip set for a V-band phase-locked local oscillator
    • Nov
    • A. Kanda, T. Hirota, H. Okazaki, and M. Nakamae, “An MMIC chip set for a V-band phase-locked local oscillator,” in IEEE GaAs IC Symp. Dig., Nov. 1995, pp. 259-262.
    • (1995) IEEE GaAs IC Symp. Dig. , pp. 259-262
    • Kanda, A.1    Hirota, T.2    Okazaki, H.3    Nakamae, M.4
  • 4
    • 0030408531 scopus 로고    scopus 로고
    • Highly integrated three-dimensional MMIC single-chip receiver and transmitter
    • Dec
    • I. Toyoda, T. Tokumistu, and M. Aikawa, “Highly integrated three-dimensional MMIC single-chip receiver and transmitter,” IEEE Trans. Microwave Theory Tech., vol. 44, pp. 2340-2346, Dec. 1996.
    • (1996) IEEE Trans. Microwave Theory Tech. , vol.44 , pp. 2340-2346
    • Toyoda, I.1    Tokumistu, T.2    Aikawa, M.3
  • 5
    • 0030083772 scopus 로고    scopus 로고
    • 0:15 μm T-sharped Gate fabrication for GaAs MODFET using phase shift lithography
    • Feb
    • H. Takenaka and D. Ueda, “0:15 μm T-sharped Gate fabrication for GaAs MODFET using phase shift lithography,” IEEE Trans. Electron Devices, vol. 43, pp. 238-244, Feb. 1996.
    • (1996) IEEE Trans. Electron Devices , vol.43 , pp. 238-244
    • Takenaka, H.1    Ueda, D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.