High power Al0.3Ga0.7As/In0.2Ga0.8As enhancement-mode PHEMT for low-voltage wireless communication systems

Electronics Letters

Volumn 38, Issue 18, 2002, Pages 1063-1064

  Chen, S H ^a   Chang, Li ^a   Chang, E Y ^a   Wu, J W ^b   Chang, Chun Yen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b DELTA ELECTRONICS INC   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CELLULAR RADIO SYSTEMS; ELECTRIC CURRENTS; HETEROJUNCTIONS; POWER AMPLIFIERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; TRANSCONDUCTANCE; WIRELESS TELECOMMUNICATION SYSTEMS;

ALUMINUM GALLIUM ARSENIDE; CELLULAR HANDSET;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0037194861     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020700     Document Type: Article

References (8)

1. A power PHEMT device technology for broadband wireless access
2. 5 mm high-power-density dual-delta-doped power HEMTs for 3 V L-band applications
3. 1-watt Ka-band coplanar high power MMIC amplifiers using 0.15 μm GaAs PHEMTs
4. Greater than 70% PAE enhancement-mode GaAs HJFET power amplifier MMIC with extremely low leakage current
5. A true enhancement mode single supply power HFET for portable applications
6. Current path optimized structure for high drain current density and high gate-turn-on voltage enhancement mode heterostructure field effect transistors
7. E-PHEMT for single supply, no drain switch, and high efficiency cellular telephone power amplifiers
8. A 2 W, 65% PAE single-supply enhancement-mode power PHEMT for 3 V PCS applications