Investigation of a new InGaP-InGaAs pseudomorphic double doped-channel heterostructure field-effect transistor (PDDCHFET)

IEEE Transactions on Electron Devices

Volumn 50, Issue 8, 2003, Pages 1717-1723

  Chuang, Hung Ming ^a   Cheng, Shiou Ying ^b   Chen, Chun Yuan ^a   Liao, Xin Da ^a   Liu, Rong Chau ^c   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b ORIENTAL INSTITUTE OF TECHNOLOGY   (Taiwan)

^c CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Double doped channel (DDC); Pseudomorphic double doped channel heterostructure field effect transistor (PDDCHFET); Schottky

Indexed keywords

DOPING (ADDITIVES); ELECTRIC INSULATORS; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; LEAKAGE CURRENTS; MICROWAVES; SCHOTTKY BARRIER DIODES;

DOUBLE DOPED CHANNEL (DDC);

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0042026655     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.815145     Document Type: Article

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