Electrical characteristics of passivated Pseudomorphic HEMTs with P2S5/(NH4)2SX pretreatment

IEEE Transactions on Electron Devices

Volumn 55, Issue 3, 2008, Pages 721-726

  Chiu, Hsien Chin ^a   Huang, Yuan Chang ^a   Chen, Chung Wen ^a   Chang, Liann Be ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

Linearity; Passivation; Power; Pseudomorphic high electron mobility transistor (pHEMT); Sulfur

Indexed keywords

ELECTRIC PROPERTIES; LEAKAGE CURRENTS; PASSIVATION; SURFACE ROUGHNESS; SURFACE TREATMENT;

PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR; SULFUR PRETREATMENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 40949107358     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.915386     Document Type: Article

References (14)

1. T and low microwave noise," IEEE Trans. Electron Devices, vol. 48, no. 3, pp. 581-585, Mar. 2001.
2. x. treatment and hydrogenation using plasma deposited silicon nitride gate insulator," IEEE Trans. Electron Devices, vol. 49, no. 3, pp. 343-353, Mar. 2002.
3. x treatment," Solid State Commun., vol. 137, pp. 257-261, 2006.
4. 0.85As pHEMTs using a low-k BCB passivation," IEEE Electron Device Lett. vol. 24, no. 5, pp. 243-245, 2002.
5. P. H. Lai, C. W. Chen, C. I. Kao, S. I. Fu, Y. Y. Tsai, C. W. Hung, C. H. Yen, H. M. Chuang, S. Y. Cheng, and W. C. Liu, "Influences of sulfur passivation on temperature-dependent characteristics of an AlGaAs/InGaAs/GaAs PHEMT," IEEE Trans. Electron Devices, vol. 53, no. 1, pp. 1-8, Jan. 2006.
6. Z. Pang, K. C. Song, P. Mascher, and J. G. Simmons, "Sulfur passivation of InP/InGaAs metal-semiconductor-metal photodetectors," J. Electrochem. Soc., vol. 146, pp. 1946-1951, 1999.
7. X treatment," Electrochem. Solid-State Lett., vol. 9, pp. G309-G311, 2006.
8. C. S. Liu and J. F. Kauffman, "Excitation power dependence of photoluminescence enhancement from passivated GaAs," Appl. Phys. Lett., vol. 66, pp. 3504-3506, 1995.
9. 5-passivated GaAs," Jpn. J. Appl. Phys., vol. 33, pp. 3813-3824, 1994.
10. 2S treatments," Electrochem. Solid-State Lett., vol. 10, pp. H79-H81, 2007.
11. Y. Cai, Y. Zhou, K. J. Chen, and K. M. Lau, "High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment," IEEE Electron Device Lett., vol. 26, no. 7, pp. 435-437, 2005.
12. H. H. Lee, R. J. Racicot, and S. H. Lee, "Surface passivation of GaAs," Appl. Phys. Lett., vol. 54, pp. 724-726, 1989.
13. A. E. Parker and J. G. Rathmell, "Measurement and characterization of HEMT dynamics," IEEE Trans. Microw. Theory Tech., vol. 49, no. 11, pp. 2105-2111, Nov. 2001.
14. M. E. Levinshtein, F. Pascal, S. Contreras, W. Knap, S. L. Rumyantsev, R. Gaska, J. W. Yang, and M. S. Shur, "Low-frequency noise in GaN/GaAlN heterojunctions," Appl. Phys. Lett., vol. 72, pp. 3053-3055, 1998.