Further suppression of surface-recombination of an InGaP/GaAs HBT by conformal passivation

IEEE Transactions on Electron Devices

Volumn 53, Issue 12, 2006, Pages 2901-2906

  Fu, Ssu I ^b   Cheng, Shiou Ying ^a,c   Chen, Tzu Pin ^b   Lai, Po Hsien ^b   Hung, Ching Wen ^b   Chu, Kuei Yi ^c   Chen, Li Yang ^c   Liu, Wen Chau ^a,b  

^a IEEE   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NATIONAL ILAN UNIVERSITY   (Taiwan)

Author keywords

(NH4)2S x; Base surface recombination current; Ledge; Sheet resistance; Specific contact resistance; Sulfur passivation

Indexed keywords

BASE SURFACE RECOMBINATION CURRENT; SULFUR PASSIVATION; SURFACE RECOMBINATION;

CONTACT RESISTANCE; ELECTRIC CURRENTS; PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SHEET RESISTANCE; SURFACE STRUCTURE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33947244480     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.885094     Document Type: Article

References (16)

1. W. S. Lour, "High-gain, lovv-offset-voltage and zero potential spike by InGaP/GaAs δ-doped single heterojunction bipolar transistor (δ-SHBT)," IEEE Trans. Electron Devices, vol. 44, no. 2, pp. 346-348, Feb. 1997.
2. S. Y. Cheng, "Comprehensive study of an InGaP/AlGaAs/GaAs heterojunction bipolar transistor (HDT) with a continuous conduction-band structure," Semicond. Sci. Teclmol, vol. 17, no. 7, pp. 701-707, Jul. 2002.
3. o.5P/GaAs double heterostructure- emitter bipolar transistor using emitter edge-thinning technique," Jpn. J. Appl. Phys., vol. 36, no. 4A, pp. 2007-2009, Apr. 1997.
4. W. S. Lour and J. L. Hsieh, "Effects of passivation-layer thickness and current gain enhancement of InGaP/GaAs (δ-doped single heterojunction bipolar transistors using an InGaP passivation layer," Semicond. Sci. Technol., vol. 13, no. 8, pp. 847-851, Aug. 1998.
5. T. Henderson, "Modeling gallium arsenide heterojunction bipolar transistor ledge variations for insight into device reliability," Microclectron. Reliab., vol. 42, no. 7, pp. 1011-1020, 2002.
6. C. E. Huang, C. P. Lee, H. C. Liang, and R. T. Huang, "Critical spacing between emitter and base in InGaP heterojunction bipolar transistors (HBTs)," IEEE Electron Device Lett., vol. 23, no. 10, pp. 576-578, Oct. 2002.
7. C. Y. Chen, S. I Fu, S. Y. Cheng, C. Y. Chang, C. H. Tsai, C. H. Yen, S. F. Tsai, R. C. Liu, and W. C. Liu, "Influences of surface sulfur treatments on the temperature-dependent characteristics of heterojunction bipolar transistors (HBTs)," IEEE Trans. Electron Devices, vol. 51, no. 12, pp. 1963-1971, Dec. 2004.
8. S. W. Tan, H. R. Chen, M. Y. Chu, W. T. Chen, A. H. Lin, M. K. Hsu, T. S. Lin, and W. S. Lour, "Comparisons between InGaP/GaAs heterojunction bipolar transistors with a sulfur- and an InGaP- passivated base surface," Superlatt. Microstruct., vol. 37, no. 6, pp. 401-409, Jun. 2005.
9. S. Y. Cheng, S. I. Fu. K. Y. Chu, P. H. Lai, L. Y. Chen, W. C. Liu, and M. H. Chiang, "An improved de and microwave performance of heterojunction bipolar transistors by full sulfur passivation," J. Vac. Sci. Technol. B, Mlcroelectron., vol. 24, no. 2, pp. 669-674, Mar. 2006.
10. S. Tiwari and D. J. Frank, "Analysis of the operation of GaAlAs/GaAs HBT's," IEEE Trans. Electron Devices, vol. 36, no. 10, pp. 2105-2121, Oct. 1989.
11. 4 molecular beam species on photoluminescence of molecular beam epitaxially grown GaAs," Appl. Phys. Lett., vol, 37, no. 4, pp. 416-418, Aug. 1980.
12. A. Callegari, P. D. Hoh, D. A. Buchanan, and D. Lacey, "Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment," Appl. Phys. Lett., vol. 54, no. 4, pp. 332-334, Jan. 1989.
13. M. G. Adlerstein and J. M. Gering, "Current induced degradation in GaAs HBT's," IEEE Trans. Electron Devices, vol. 47, no. 2, pp. 434-439, Feb. 2000.
14. M. Y. Ghannam and R. P. Mertens, "Surface-recombination current with a nonideality factor greater than 2," IEEE Electron Device Lett., vol. 10, no. 6, pp. 242-244, Jun. 1989.
15. x treatment on the surface of III-V compound semiconductors," Jpn. J. Appl. Phys., vol. 30, no. 3A, pp. 322-325, Mar. 1991.
16. W. Liu, Handbook of III-V Heterojunction Bipolar Transistors. New York: Wiley, 1998.