Enhancement of high-temperature high-frequency performance of GaAs-based FET's by the high-temperature electronic technique

IEEE Transactions on Electron Devices

Volumn 46, Issue 1, 1999, Pages 24-31

  Narasimhan, R ^a   Sadwick, L P ^b   Hwu, Ruey J ^a  

^a University of Utah   (United States)

^b MICRON TECHNOLOGY INC   (United States)

Author keywords

FET's; HEMT's; High temperature effects; Hightemperature techniques; Leakage currents; MESFET's; Scattering parameters measurement; Semiconductor device breakdown

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; HIGH ELECTRON MOBILITY TRANSISTORS; HIGH TEMPERATURE EFFECTS; LEAKAGE CURRENTS; SEMICONDUCTING GALLIUM ARSENIDE; THERMOANALYSIS;

HIGH-FREQUENCY SCATTERING PARAMETERS MEASUREMENT; HIGH-TEMPERATURE ELECTRONIC TECHNIQUES (HTET);

MESFET DEVICES;

EID: 0032760545     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.737437     Document Type: Article

References (24)

1. J. L. Evans, C. S. Romanczuk, L. E. Bosley, and R. W. Johnson, "High temperature requirements for automotive electronic controllers," inProc. Second Int. High-Temperature Conf., 1994, vol. 1, pp. I-3-I-7.
2. J. C. Ereskine, R. G. Carter, J. A. Hearn, H. L. Fields, and J. M. Himelick, "High temperature automotive electronics: Trends and challenges," inProc. Second Int. High-Temperature Conf., 1994, vol. 1, pp. I-9-I-18.
3. C. M. Carlin and J. K. Ray, "The requirements for high-temperature electronics in a future high-speed civil transport," inProc. Second Int. High-Temperature Conf., 1994, vol. 1, pp. I-19-I-26.
4. S. J. Cloyd, "Research activity on high-temperature electronics and its future application in space exploration in Japan," inProc. Second Int. High-Temperature Conf., 1994, vol. 1, pp. I-27-I-28.
5. M. Tajima, "Research activity on high-temperature electronics and its future application in space exploration in Japan," inProc. Second Int. High Temperature Conf., 1994, vol. 1, pp. I-29-I-34.
6. K. Frickle et al, "A new GaAs technology for stable FET's at 300° C," IEEE Electron Device Lett., vol. 10, pp. 577-579, Dec. 1989.
7. P. C. Canfield, S. C. F. Lam, and D. J. Allstot, "Modeling of frequency and temperature effects in GaAs MESFET's," IEEE J. Solid-State Circuits, vol. 15, pp. 299-306.
8. T. Bottner and K. Frickle et al, "Technology and performance of a high temperature stable (up to 300° C operational amplifier)," in Proc. First Int. High Temperature Conf., Albuquerque, NM, June 1991, pp. 77-82.
9. J. W. Swonger, S. J. Gaul, and P. L. Heedley, "An evaluation of OP amp performance up to 300° C using dielectric isolation and bonded wafer material technologies," inProc. First Int. High Temperature Electronics Conf., 1991, vol. 2, pp. 281-290.
10. T. B. Parry, D. H. Lee, T. Tran, L. P. Sadwick, and M. Sokolich, "Propagation delay of gallium arsenide buffered FET logic circuits at elevated temperatures," inProc. First Int. High Temperature Electronics Conf., 1991, vol. 2, pp. 313-346.
11. P. K. Ojala, L. S. Cooper, and F. S. Shoucair, "GaAs MESFET characterization and modeling for high temperature integrated circuit applications (25-4100° C)," inProc. First Int. High Temperature Conf., Albuquerque, NM, June 1991, pp. 68-73.
12. H. Wong, C. Liang, and N. W. Cheung, "On the temperature variation of threshold voltage of GaAs MESFET's," IEEE Trans. Electron Devices, vol. 39, pp. 1571-1577, 1991.
13. F. S. Shoucair and P. K. Ojala, "High temperature electrical characteristics of GaAs MESFET's (25-400°C)," IEEE Trans. Electron Devices, vol. 39, pp. 1551-1557, 1991.
14. J. C. Zolper, V. M. Hietala, A. G. Baca, M. S. Housel, and M. E. Sherwin, "Comparison of GaAs JFET's to MESFET's for high temperature operation," inProc. Third Int. High Temperature Electronics Conf., 1996, vol. 1, pp. IV-9-IV-14.
15. L. P. Sadwick, R. M. McDonald, R. J. Crofts, J. Koniak, R. J. Hwu, and M. Sokolich, "350° C GaAs MESFET-based electronic technology," inProc. Second Int. High Temperature Conf., Charlotte, NC, June 1994, p. V-27.
16. L. P. Sadwick, R. J. Crofts, Y. H. Feng, M. Sokolich, and R. J. Hwu, "Low leakage, high performance GaAs-based high-temperature electronics," in 21st Int. Symp. Compound Semiconductors, San Diego, CA, Sept. 19-33, 1994, p. 63.
17. R. Lee, G. Trombley, B. Johnson, R. Reston, C. Havasy, and M. Mah, "Low leakage GaAs MESFET devices operating to 350° C," inProc. Second High-Temperature Electronics Conf., 1994, pp. V-3-V-8.
18. N. A. Papanicolaou, W. T. Anderson, and D. S. Katzer, "All-refractory GaAs FET for high-temperature applications," inProc. Second Int. High-Temperature Conf., 1994, pp. V-9-V-14.
19. C. D. Wilson and A. G. O'Neill, inProc. Second Int. High-Temperature Conf., 1994, vol. 1, pp. V-15-V-20.
20. S. Baier, S. J. Nohava, R. Jeter, R. Carlson, and S. Hanka, "High-temperature electronics using complementary heterostructure FET (CHFET) technology," inProc. Second Int. High-Temperature Conf., 1994, vol. 1, pp. V-21-V-26.
21. J. Wurfl, J. B. Janke, K. H. Rooch, and S. Thierbach, "Novel test structures for the determination of device relevant physical parameters at high temperatures," inProc. Second Int. High-Temperature Conf., 1994, vol. 1, pp. V-33-V-38.
22. L. P. Sadwick, "Thermal currents in proton bombarded GaAs at high temperatures," Appl. Phys. Lett., vol. 64, pp. 79-81, 1994.
23. E. Rhoderick and R. Williams, "Metal semiconductor contacts," inMonographs in Electrical and Electronics Engineering. Oxford, U.K.: Oxford Science, 1988.
24. V. Krozer et al, "Modeling of high-temperature performance of MESFET's and HBT's," in P roc. Second Int. High-Temperature Conf., Charlotte, NC, June 1994, pp. 110-115.