Stability study and effect of passivation on InP/InGaAs double heterojunction bipolar transistors

Applied Physics Letters

Volumn 94, Issue 6, 2009, Pages

  Lin, Yu Shyan ^a   Jou, Yu Jeng ^a   Huang, Pin Chun ^a  

^a NATIONAL DONG HWA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BICMOS TECHNOLOGY; BIPOLAR TRANSISTORS; PASSIVATION; PHOTOELECTRON SPECTROSCOPY; SULFUR; TRANSISTORS; X RAY PHOTOELECTRON SPECTROSCOPY;

ANALYTICAL EXPRESSIONS; BASE CURRENTS; BASE-COLLECTOR JUNCTIONS; BIAS STABILITIES; COLLECTOR CURRENTS; CONDUCTION-BAND; DC CURRENT GAINS; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; INP; INP/INGAAS; OFFSET VOLTAGES; STABILITY STUDIES; TEMPERATURE RANGES; TEMPERATURE STABILITIES; X-RAY PHOTOELECTRON SPECTROSCOPIES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 60349109380     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3075842     Document Type: Article

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