The effect of sulfur treatment on the temperature-dependent performance of InGaP/GaAs HBTs

IEEE Transactions on Device and Materials Reliability

Volumn 6, Issue 4, 2006, Pages 500-507

  Cheng, Shiou Ying ^a,b   Fu, Ssu I ^c   Chen, Tzu Pin ^c   Lai, Po Hsien ^c   Liu, Rong Chau ^d   Chu, Kuei Yi ^b   Chen, Li Yang ^b   Liu, Wen Chau ^a,c  

^a IEEE   (Taiwan)

^b NATIONAL ILAN UNIVERSITY   (Taiwan)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^d CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Heterojunction bipolar transistor (HBT); Offset voltage; Sulfur passivation; Temperature dependent

Indexed keywords

CONTACT RESISTANCE; OFFSET VOLTAGE; SHEET RESISTANCE; SULFUR PASSIVATION; SULFUR TREATMENT; TEMPERATURE DEPENDENT;

ELECTRIC RESISTANCE; HETEROJUNCTION BIPOLAR TRANSISTORS; PASSIVATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THERMODYNAMIC STABILITY; VOLTAGE CONTROL;

SULFUR;

EID: 33845524832     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2006.883154     Document Type: Article

References (17)

1. W. S. Lour, "High-gain, low offset voltage, and zero potential spike by InGaP/GaAs 5-doped single heterojunction bipolar transistors (δ-SHBT)," IEEE Trans. Electron Devices, vol. 44, no. 2, pp. 346-348, Feb. 1997.
2. S. Y. Cheng, "Investigation of an InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with reduce potential spike," Superlattices Microstruct., vol. 30, no. 2, pp. 112-117, Aug. 2001.
3. S. Y. Cheng, J. H. Tsai, W. L. Chang, H. J. Pan, Y. H. Shie, and W. C. Liu, "Investigation of an InGaP/GaAs resonant-tunneling transistor (RTT)," Solid State Electron., vol. 43, no. 4, pp. 755-760, Apr. 1999.
4. 3HBT)," Thin Solid Films, vol. 345, no. 2, pp. 270-272, May 1999.
5. 0.5P/GaAs double heterostructure-emitter bipolar transistor using emitter edge-thinning technique," Jpn. J. Appl. Phys., vol. 36, no. 4A, pp. 2007-2009, Apr. 1997.
6. W. S. Lour and J. L. Hsieh, "Effects of passivation-layer thickness and current gain enhancement of InGaP/GaAs (δ-doped single heterojunction bipolar transistors using an InGaP passivation layer," Semicond. Sci. Technol., vol. 13, no. 8, pp. 847-851, 1998.
7. S. W. Tan, H. R. Chen, M. Y. Chu, W. T. Chen, A. H. Lin, M. K. Hsu, T. S. Lin, and W. S. Lour, "Comparisons between InGaP/GaAs heterojunction bipolar transistors with a sulfur- and an InGaP-passivated base surface," Superlattices Microstruct., vol. 37, no. 6, pp. 401-409, Jun. 2005.
8. 3 glass on self-aligned AlGaAs/GaAs heterojunction bipolar transistors," Appl. Phys. Lett., vol. 57, no. 20, pp. 2113-2115, Nov. 1990.
9. A. Callegari, P. D. Hoh, D. A. Buchanan, and D. Lacey, "Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment," Appl. Phys. Lett., vol. 54, no. 4, pp. 332-334, Jan. 1989.
10. 2 processes," Mater. Sci. Eng., vol. 37, no. 1, pp. 172-176. Feb. 1996.
11. J. Masum and T. J. Hall, "Degradation of AlGaAs/GaAs and InGaP/GaAs heterojunction bipolar transistors under high current stress," Semicond. Sci. Technol., vol. 12, no. 10, pp. 1202-1209, Oct. 1997.
12. S. Tiwari and D. J. Frank, "Analysis of the operation of GaAlAs/GaAs HBT's," IEEE Trans. Electron Devices, vol. 36, no. 10, pp. 2105-2121, Oct. 1989.
13. 1-xAs heterojunction," J. Appl. Phys., vol. 49, no. 6, pp. 3530-3542, Jun. 1978.
14. S. Tiwari, D. J. Frank, and S. L. Wright, "Surface recombination in GaAlAs/GaAs heterostructure bipolar transistors," J. Appl. Phys., vol. 64, no. 10, pp. 5009-5012, Nov. 1988.
15. B. Mazhari, G. B. Gao, and H. Morkoc, "Collector-emitter offset voltage in heterojunction bipolar transistors," Solid State Electron., vol. 34, no. 3, pp. 315-321, Mar. 1991.
16. 0.48P/GaAs heterojunction bipolar transistors grown by metal organic vapor phase epitaxy," IEEE Trans. Electron Devices, vol. 43, no. 1, pp. 2-7, Jan. 1996.
17. W. Liu, Handbook of III-V Heterojunction Bipolar Transistors. New York: Wiley, 1998.