PH Sensing of Ba0.7 Sr0.3 Ti O3 Si O2 film for metal-oxide-semiconductor and ion-sensitive field-effect transistor devices

Journal of the Electrochemical Society

Volumn 156, Issue 6, 2009, Pages

  Chen, Chun Yuan ^a,b   Chou, Jung Chuan ^a   Chou, Hsueh Tao ^a  

^a NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b CHUNG CHOU INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BA0.7SR0.3; BARIUM STRONTIUM TITANATES; CAPACITANCE-VOLTAGE MEASUREMENTS; CURRENT-VOLTAGE MEASUREMENTS; DRIFT RATES; ELECTRICAL CHARACTERISTICS; ELECTRICAL PROPERTIES; ELECTROLYTE/INSULATOR/SEMICONDUCTOR; FERROELECTRIC STRUCTURES; GATE OXIDES; HIGH FREQUENCY CAPACITANCES; ION-SENSITIVE FIELD EFFECT TRANSISTORS; METAL-OXIDE SEMICONDUCTORS; PH SENSING; PH SENSITIVITIES; SENSING PROPERTIES; SPUTTERING TECHNIQUES; TEMPERATURE DEPENDENCES;

BARIUM; BARIUM TITANATE; CAPACITANCE; DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; MOS DEVICES; OZONE WATER TREATMENT; PH SENSORS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; STRONTIUM; STRONTIUM COMPOUNDS; VOLTAGE MEASUREMENT;

ULTRATHIN FILMS;

EID: 65449164566     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3086749     Document Type: Article

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