Modeling the pH response of silicon nitride ISFET devices

Sensors and Actuators, B: Chemical

Volumn 68, Issue 1, 2000, Pages 307-312

  Kuhnhold R ^a   Ryssel, H ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; MATHEMATICAL MODELS; OXIDATION; PH; SENSORS; SILICON NITRIDE;

ELECTROLYTE INSULATOR SILICON STRUCTURES; SITE BINDING THEORY; SURFACE OXIDATION;

ION SENSITIVE FIELD EFFECT TRANSISTORS;

EID: 0342954979     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(00)00449-4     Document Type: Article

References (10)

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