Simulation of Ta2O5-gate ISFET temperature characteristics

Sensors and Actuators, B: Chemical

Volumn 71, Issue 1-2, 2000, Pages 73-76

  Chou, Jung Chuan ^a   Li, Ying Shin ^a   Chiang, Jung Lung ^b  

^a NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; FIELD EFFECT TRANSISTORS; MATHEMATICAL MODELS; SENSITIVITY ANALYSIS; TANTALUM COMPOUNDS;

ION-SENSITIVE FIELD-EFFECT TRANSISTORS (ISFET); STERN ELECTRICAL DOUBLE LAYER MODELS;

PH SENSORS;

EID: 0034323270     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(00)00611-0     Document Type: Article

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