A positive temperature coefficient of resistivity effect from a paraelectric Pt/(Ba0.5,Sr0.5)TiO3/IrO2 thin-film capacitor

Applied Physics Letters

Volumn 71, Issue 3, 1997, Pages 371-373

  Hwang, Cheol Seong ^a   Lee, Byoung Taek ^a   Cho, Hag Ju ^a   Lee, Ki Hoon ^a   Kang, Chang Seok ^a   Hideki, Horii ^a   Lee, Sang In ^a   Lee, Moon Yong ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000595778     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119540     Document Type: Article

References (13)

1. J. F. Scott, Integr. Ferroelectr. 9, 1 (1995).
2. J. F. Scott, M. Azuma, A. C. Paz de Araujo, L. D. McMillan, M. C. Scott, and T. Roberts, Integr. Ferroelectr. 4, 61 (1994).
3. S. Dey, J-J. Lee, and P. Alluri, Jpn. J. Appl. Phys. 34, 3142 (1995).
4. L. Zheng, C. Lin, and T-P. Ma, J. Phys. D 29, 457 (1996).
5. C. S. Hwang, B. T. Lee, S. O. Park, J. W. Kim, H-J. Cho, C. S. Kang, H. Horii, S. I. Lee, and M. Y. Lee, Integr. Ferroelectr. 13, 157 (1996).
6. C. S. Hwang, B. T. Lee, J. W. Kim, K. H. Lee, H-J. Cho, H. Horii, C. S. Kang, S. I. Lee, Y. B. Koh, and M. Y. Lee, J. Appl. Phys. (submitted).
7. B. M. Kulwicki, in Advances in Ceramics, Vol. 1 Grainboundary Phenomena in Electronic Ceramics, edited by L. M. Levinson and D. C. Hill (Am. Ceram. Soc. Columbus, OH, 1981), pp. 138-153.
8. For example, B. Huybrechts, K. Ishizaki, and M. Takata, J. Mater. Sci. 30, 2463 (1995).
9. W. Heywang, Solid-State Electron. 3, 51 (1961).
10. W. Heywang, J. Am. Ceram. Soc. 47, 484 (1964).
11. H-J. Cho, H. Horii, C. S. Hwang, J. W. Kim, C. S. Kang, B. T. Lee, S. I. Lee, Y. B. Koh, and M. Y. Lee, Jpn. J. Appl. Phys. 36, 197 (1997).
12. A. Lagrange, Present and Future of Zinc oxide Varistors in Electronic Ceramics, edited by B. C. H. Steel (Elsevier, New York, 1991), p. 9.
13. L. S. Roblee, M. J. Mangaudis, E. D. Lasinsky, A. G. Kimball, and S. B. Brummer, Mater. Res. Soc. Symp. Proc. 55, 303 (1986).