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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 7 A, 1997, Pages 4382-4385

Effects of post-annealing on the conduction properties of Pt/(Ba, Sr)TiO3/Pt capacitors for dynamic random access memory applications

(6) Joo, Jae Hyun a Jeon, Yoo Chan a Seon, Jeong Min a Oh, Ki Young a Roh, Jae Sung a Kim, Jae Jeong a

a Hynix Semiconductor Inc (South Korea)

Author keywords

(Ba, Sr)TiO3; Annealing; Leakage current; Oxygen vacancy; Thin films

Indexed keywords

DYNAMIC RANDOM ACCESS MEMORY; ENERGY BAND DIAGRAM; OXYGEN VACANCY;

ANNEALING; BARIUM TITANATE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; ELECTRODES; LEAKAGE CURRENTS; PLATINUM; RANDOM ACCESS STORAGE; SPUTTERING; STRONTIUM COMPOUNDS; THIN FILMS;

CAPACITORS;

EID: 0031185989 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.36.4382 Document Type: Article

Times cited : (40)

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