Improvement of leakage current characteristics of Ba0.5Sr0.5TiO3 films by N2O plasma surface treatment

Applied Physics Letters

Volumn 71, Issue 22, 1997, Pages 3221-3223

  Cho, Hag Ju ^a   Oh, Sejun ^a   Kang, Chang Seok ^a   Hwang, Cheol Seong ^a   Lee, Byoung Taek ^a   Lee, Ki Hoon ^a   Horii, Hideki ^a   Lee, Sang In ^a   Lee, Moon Yong ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001524623     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120296     Document Type: Article

References (6)

1. C. S. Hwang, S. O. Park, H-J. Cho, C. S. Kang,. H-K. Kang, S. I. Lee, and M. Y. Lee. Appl. Phys. Lett. 67, 2819 (1995).
2. S. O. Park. C. S. Hwang, H-J. Cho, C. S. Kang, H-K. Kang, S. I. Lee, and M. Y. Lee, Jpn. J. Appl. Phys., Part 1 35, 233 (1996).
3. S. Kamiyama, H. Suzuki, H. Watanabe, A. Sakai and M. Oshida, T. Tatsumi, T. Tanigawa, N. Kasai, and A. Ishitani, Proceedings of International Electron Devices Meeeting 1993 (IEEE, Washington, DC. 1993). p. 49.
4. Y. Ohji, Y. Matsui. T. Itoga. M. Hirayama, Y. Sugawara, K. Torii, H. Miki, M. Nakata, I. Asano. S. Iijima, and Y. Kawamoto, Proceedings of International Electron Devices Meeting 1995 (IEEE. Washington, DC. 1995), p. 111.
5. S. C. Sun and T. F. Chen. IEEE Electron Device Lett. 17, 355 (1996).
6. M. Yamamuka, T. Kawahara, T. Makita, A. Yuuki, and K. Ono, Jpn. J. Appl. Phys., Part 1 35, 729 (1996).