Shallow junction engineering by Phosphorus and Carbon co-implantation: Optimization of Carbon dose and energy

Materials Research Society Symposium Proceedings

Volumn 994, Issue , 2007, Pages 217-222

  Cagnat, Nathalie ^a   Laviron, Cyrille ^b   Mathiot, Daniel ^c   Rando, Chris ^d   Juhel, Marc ^a  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

^c Faculté de Médecine   (France)

^d Freescale   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANALYSIS; DEFECTS; DIFFUSION; PHOSPHORUS; SEMICONDUCTOR JUNCTIONS;

AMORPHOUS/CRYSTALLINE INTERFACE; CO-IMPLANTATION; INTERSTITIALS; JUNCTION LEAKAGES; PHOSPHORUS DIFFUSION; PRE-AMORPHIZATION IMPLANTATION; PROJECTED RANGE; SHALLOW JUNCTION;

CARBON;

EID: 45749137949     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0994-f08-04     Document Type: Conference Paper

References (7)

1. H. Graoui, M. Hilkene, B. McComb, M. Castle, S. Felch, A. Al-Bayati, A. Tjandra and M.A. Foad, Nucl. Instr. And Meth. In Phys. Res. B 237, 46 (2005)
2. B.J. Pawlak, R. Duffy, T. Janssens, B. Brijs, W. Vandervorst, E.J.H. Collart, S.B. Felch and N.E.B. Cowern, Appl. Phys. Lett. 89, 062110 (2006)
3. B.J. Pawlak, R. Duffy, T. Janssens, W. Vandervorst, S.B. Felch, E.J.H. Collart and N.E.B. Cowern, Appl. Phys. Lett. 89 (6), 62102 (2006)
4. C.F. Tan, E.F. Chor, H. Lee, E. Quek and L. Chan, IEEE Electron Device Letters (2006) (http://ieeexplore.ieee.org/iel5/55/21998/101109LED2006874127. pdf)
5. D. Mathiot and J.C. Pfister, J. Appl. Phys. 55 (10), 3518 (1984)
6. L.C. Kimerling, M.T. Asom, J.L. Benton, P.J. Drevinsky and C.E. Caefer, Material Science Forum, 38-41, 141 (1989)
7. S. Mirabella, A. Coati, D. de Salvador, E. Napolitani, A. Mattoni, G. Bisognin, M. Berti, A. Camera, A.V. Drigo, S. Scalese, S. Puivirenti, A. Terrasi and F. Priolo, Phys. Rev. B, 65, 045209 (2002)