Superior N- and P-MOSFET scalability using carbon co-implantation and spike annealing

Solid-State Electronics

Volumn 51, Issue 11-12, 2007, Pages 1432-1436

  Augendre, E ^a   Pawlak, B J ^b   Kubicek, S ^a   Hoffmann, T ^a   Chiarella, T ^a   Kerner, C ^a   Severi, S ^a   Falepin, A ^a   Ramos, J ^a   De Keersgieter, A ^a   Eyben, P ^a   Vanhaeren, D ^a   Vandervorst, W ^a   Jurczak, M ^a   Absil, P ^a   Biesemans, S ^a  

^a IMEC   (Belgium)

^b NXP Research   (Belgium)

Author keywords

Carbon; Ion implantation; MOSFET; Spike annealing

Indexed keywords

ANNEALING; CARBON; ION IMPLANTATION; PHOSPHORUS; SCALABILITY;

EXTERNAL RESISTANCE; HIGHLY DOPED DRAIN (HDD); SOURCE/DRAIN EXTENSIONS (SDE); SPIKE ANNEALING;

SOLID STATE PHYSICS;

EID: 36248987799     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.09.038     Document Type: Article

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