The study of plasma doping process for ultra shallow junctions

Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007

Volumn , Issue , 2007, Pages 67-68

  Lee, S W ^a   Jeong, J Y ^a   Park, C S ^a   Kim, J H ^a   Ji, J Y ^a   Choi, J Y ^a   Lee, Y J ^a   Han, S H ^b   Kim, K M ^c   Lee, W J ^c   Rha, S K ^d   Oh, J K ^e  

^a LTP   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

^c Sejong University   (South Korea)

^d Hanbat National University   (South Korea)

^e Hynix   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; ION BOMBARDMENT; ION IMPLANTATION; IONS; PLASMAS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; TECHNICAL PRESENTATIONS;

DUTY RATIOS; FUTURE APPLICATIONS; HIGH DOSE LEVELS; HIGH THROUGHPUTS; JUNCTION DEPTHS; LOW ENERGIES; PLASMA DOPING PROCESSES; PLASMA SOURCE ION IMPLANTATIONS; SHALLOW DEPTHS; SHALLOW JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 47649103713     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWJT.2007.4279950     Document Type: Conference Paper

References (7)

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