Ultra shallow junction formation using plasma doping and laser annealing for sub-65 nm technology nodes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 2961-2964

  Yon, Guk Hyon ^a   Buh, Gyoung Ho ^a   Park, Tai Su ^a   Hong, Soo Jin ^a   Shin, Yu Gyun ^a   Chung, U In ^a   Moon, Joo Tae ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Junction depth; Laser annealing; Plasma doping; Shallow junction; Sheet resistance

Indexed keywords

DEGRADATION; DOPING (ADDITIVES); ELECTRIC RESISTANCE; LASER APPLICATIONS; MOSFET DEVICES; PLASMAS; RAPID THERMAL ANNEALING;

JUNCTION DEPTH; LASER ANNEALING; PLASMA DOPING; SHALLOW JUNCTION; SHEET RESISTANCE;

SEMICONDUCTOR JUNCTIONS;

EID: 33646934384     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.2961     Document Type: Article

References (7)

1. S. B. Felch, E. A. Arevalo, S. Walther, Z. Fang, B. W. Koo, R. Liebert, D. Lenoble and A. Grouillet: Conf. Ion Implantation Technology, September 2000, p. 488.
2. D. Lenoble, M. J. Goeckner, S. B. Felch, Z. Fang, J. Galvier and A. Grouillet, Int. Conf. Ion Implantation Technology Proc., June 1998, Vol. 2, p. 1222.
3. S. C. Jain, W. Schoenmaker, R. Lindsay, P. A. Stolk, S. Decoutere, M. Willander and H. E. Maes: J. Appl. Phys. 91 (2002) p. 8919.
4. R. Lindsay, K. Henson, W. Vandervorst, K. Maex, B. J. Pawlak, R. Duffy, R. Surdeanu, P. Stolk, J. A. Kittla, S. Giangrandi, X. Pages and K. van der Jeugd: J. Vac. Sci. Technol. B 22 (2004) p. 306.
5. T. Ito, T. Iinuma, A. Murakoshi, H. Akutus, K. Suguro, T. Arikado, K. Okumura, M. Yoshioka, T. Owada, Y. Imaoka, H. Murayama and T. Kusuda: Jpn. J. Appl. Phys. 41 (2002) p. 2394.
6. A. Shima, Y. Wang, S. Talwar and A. Hiraiwa: Symp. VLSI Technology, 2004, p. 174.
7. K. H. Fung, H. T. Huang, S. M. Cheng, K. L. Cheng, S. W. Wang, Y. P. Wang, Y. Y. Yao, C. M. Chu and S. J. Yang: Symp. VLSI Technology, 2004, p. 92.