The carbon co-implant with spike RTA solution for phosphorus extension

Materials Research Society Symposium Proceedings

Volumn 912, Issue , 2006, Pages 33-38

  Pawlak, Bartek J ^a   Duffy, Ray ^a   Augendre, Emmanuel ^b   Seven, Simone ^b   Janssens, Tom ^b   Absil, Philippe ^b   Vandervorst, Wilfried ^b   Collart, Erik ^c   Felch, Susan ^d   Schreutelkamp, Robert ^e   Cowern, Nick ^f  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b IMEC   (Belgium)

^c AMAT   (United Kingdom)

^d AMAT   (United States)

^e AMAT   (Belgium)

^f UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ION IMPLANTATION; MOS DEVICES; PHOSPHORUS; RAPID THERMAL ANNEALING; SEMICONDUCTOR JUNCTIONS;

CHANNEL EFFECTS; CO-IMPLANTATION; FLUX SUPPRESSION; SI INTERSTITIALS;

TRANSISTORS;

EID: 33751043211     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-0912-c01-06     Document Type: Conference Paper

References (6)

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