Impact of probe penetration on the electrical characterization of sub-50 nm profiles

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 1, 2002, Pages 459-466

  Clarysse, T ^a   Vanhaeren, D ^a   Vandervorst, W ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL IMPURITIES; ELECTRIC RESISTANCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SUBSTRATES;

FOUR POINT PROBE (FPP); SPREADING RESISTANCE PROBES (SRP);

SEMICONDUCTING SILICON;

EID: 0036124718     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1432965     Document Type: Conference Paper

References (16)

1. Standard test method for sheet resistance of silicon epitaxial, diffused and ion-implnated layers using a collinear four-probe array