Co-implantation with conventional spike anneal solutions for 45 nm n -type metal-oxide-semiconductor ultra-shallow junction formation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 1, 2006, Pages 507-509

  Collart, E J H ^a   Felch, S B ^a   Pawlak, B J ^b   Absil, P P ^c   Severi, S ^c   Janssens, T ^c   Vandervorst, W ^c  

^a APPLIED MATERIALS INC   (United States)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; COBALT; MOS DEVICES; SEMICONDUCTOR JUNCTIONS;

ACTIVATED JUNCTIONS; DOPANT ENERGIES; SPIKE ANNEAL SOLUTIONS;

ION IMPLANTATION;

EID: 31544442486     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2151906     Document Type: Article

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