-
2
-
-
0036932189
-
Lithography for sub-90 nm applications
-
L. Van den Hove, A.M. Goethals, K. Ronse, M. Van Bavel and G. Vandenberghe, Lithography for sub-90 nm applications. In IEDM Team. Digest (2002) pp. 1-6
-
(2002)
IEDM Team. Digest
, pp. 1-6
-
-
Van den Hove, L.1
Goethals, A.M.2
Ronse, K.3
Van Bavel, M.4
Vandenberghe, G.5
-
3
-
-
0007329493
-
ULSI process integration for 2005 and beyond
-
ed. by C. Claeys, F. Gonzalez, H. Murota and K. Saraswat (The Electrochem. Soc., Pennington) 2001-02
-
H. Iwai and S.-I. Ohmi, ULSI process integration for 2005 and beyond. In ULSI Process Integration II, ed. by C. Claeys, F. Gonzalez, H. Murota and K. Saraswat (The Electrochem. Soc., Pennington) 2001-02 (2001) pp. 3-33.
-
(2001)
ULSI Process Integration II
, pp. 3-33
-
-
Iwai, H.1
Ohmi, S.-I.2
-
4
-
-
0033738411
-
Scaling transistors into the deep-submicron Regime
-
June
-
P.A. Packan, Scaling transistors into the deep-submicron Regime. MRS Bulletin (June 2000) pp. 19-21.
-
(2000)
MRS Bulletin
, pp. 19-21
-
-
Packan, P.A.1
-
5
-
-
0016116644
-
Design of ion-implanted MOSFETs with very small physical dimensions
-
R.H. Dennard, F.H. Gaensslen, H.-N. Yu, V.L. Rideout, E. Bassous and A.R. LeBlanc, Design of ion-implanted MOSFETs with very small physical dimensions. IEEE Solid-State Circuits SC-9 (1974) pp. 256-268.
-
(1974)
IEEE Solid-state Circuits
, vol.SC-9
, pp. 256-268
-
-
Dennard, R.H.1
Gaensslen, F.H.2
Yu, H.-N.3
Rideout, V.L.4
Bassous, E.5
Leblanc, A.R.6
-
6
-
-
0001711161
-
Scaling challenges for DRAM and microprocessors in the 21st century
-
ed. by H.Z. Massoud, H. Iwai, C. Claeys and R.B. Fair (The Electrochem. Soc., Pennington) 97-03
-
R.H. Dennard, Scaling Challenges for DRAM and Microprocessors in the 21" Century. In ULSI Science and Technology/1997, ed. by H.Z. Massoud, H. Iwai, C. Claeys and R.B. Fair (The Electrochem. Soc., Pennington) 97-03 (1997) pp. 519-532.
-
(1997)
ULSI Science and Technology/1997
, pp. 519-532
-
-
Dennard, R.H.1
-
7
-
-
0014773447
-
Local oxidation of silicon and its application in semiconductor device technology
-
J.A. Appels, E. Kooi, M.M. Paffen, J.J. H. Schatorje and W.H.G. Verkuylen, Local oxidation of silicon and its application in semiconductor device technology. Philips Res. Repts. 25 (1970) pp. 118-132
-
(1970)
Philips Res. Repts.
, vol.25
, pp. 118-132
-
-
Appels, J.A.1
Kooi, E.2
Paffen, M.M.3
Schatorje, J.J.H.4
Verkuylen, W.H.G.5
-
8
-
-
0007918337
-
Polysilicon encapsulated local oxidation of silicon for deep submicron lateral isolation
-
G. Badenes, R. Rooyackers, I. De Wolf and L. Deferm, Polysilicon encapsulated local oxidation of silicon for deep submicron lateral isolation. Jpn. J. Appl. Phys. 36 (1997) pp. 1325-1329
-
(1997)
Jpn. J. Appl. Phys.
, vol.36
, pp. 1325-1329
-
-
Badenes, G.1
Rooyackers, R.2
De Wolf, I.3
Deferm, L.4
-
9
-
-
33744759915
-
A new dummy-free shallow trench isolation concept for mixed-signal applications
-
G. Badenes, R. Rooyackers, E. Augendre, E. Vandamme, C. Perello, N. Heylen, J. Grillaert and L. Deferm, A new dummy-free shallow trench isolation concept for mixed-signal applications. J. Electrochem. Soc. 147 (2000) pp. 3827-3832.
-
(2000)
J. Electrochem. Soc.
, vol.147
, pp. 3827-3832
-
-
Badenes, G.1
Rooyackers, R.2
Augendre, E.3
Vandamme, E.4
Perello, C.5
Heylen, N.6
Grillaert, J.7
Deferm, L.8
-
11
-
-
0033280127
-
Temperate acceleration of oxide breakdown and its impact on ultra-thin gate oxide reliability
-
R. Degraeve, N. Pangon, B. Kaczer, T. Nigam, G. Groeseneken and A. Naem, Temperate acceleration of oxide breakdown and its impact on ultra-thin gate oxide reliability. In 1999 Symp. on VLSI Technology (1999) pp. 59-60.
-
(1999)
1999 Symp. on VLSI Technology
, pp. 59-60
-
-
Degraeve, R.1
Pangon, N.2
Kaczer, B.3
Nigam, T.4
Groeseneken, G.5
Naem, A.6
-
12
-
-
0016126266
-
Tunneling in thin MOS structures
-
J. Maserjian, Tunneling in thin MOS structures. J. Vac. Sci. Technol. 11 (1974) pp. 996-1003.
-
(1974)
J. Vac. Sci. Technol.
, vol.11
, pp. 996-1003
-
-
Maserjian, J.1
-
13
-
-
0031140867
-
Quantum mechanical modeling of electron tunneling current from the inversion layer of ultra-thin oxide nMOSFETs
-
S.-H. Lo, D.A. Buchanan, Y. Taur and W. Wang, Quantum mechanical modeling of electron tunneling current from the inversion layer of ultra-thin oxide nMOSFETs. IEEE Trans. Electron Dev. 18 (1997) pp. 209-211.
-
(1997)
IEEE Trans. Electron Dev.
, vol.18
, pp. 209-211
-
-
Lo, S.-H.1
Buchanan, D.A.2
Taur, Y.3
Wang, W.4
-
14
-
-
0007211102
-
The gate stack/shallow junction challenges for sub-100 nm technology generations
-
ed. by C. Claeys, F. Gonzalez, J. Murota and K. Saraswat (The Electrochem. Soc., Pennington) 2001-02
-
H.R. Huff, A. Brown and L.A. Larson, The gate stack/shallow junction challenges for sub-100 nm technology generations. In ULSI Process Integration II, ed. by C. Claeys, F. Gonzalez, J. Murota and K. Saraswat (The Electrochem. Soc., Pennington) 2001-02 (2001) pp. 223-249.
-
(2001)
ULSI Process Integration II
, pp. 223-249
-
-
Huff, H.R.1
Brown, A.2
Larson, L.A.3
-
15
-
-
2342500401
-
The high-k challenges in CMOS advanced gate-dielectric process integration
-
ed. by H.R. Huff, L. Fabry and S. Kishino (The Electrochem. Soc., Pennington) 2002-02
-
E.W.A. Young, The high-k challenges in CMOS advanced gate-dielectric process integration. In Semiconductor Silicon 2002, ed. by H.R. Huff, L. Fabry and S. Kishino (The Electrochem. Soc., Pennington) 2002-02 (2002) pp. 735-746.
-
(2002)
Semiconductor Silicon 2002
, pp. 735-746
-
-
Young, E.W.A.1
-
16
-
-
4243572717
-
Reduced gate leakage current and boron penetration of 0.18 μm 1.5V MOSFETs using integrated RTCVD oxynitride gate dielectric
-
H. Tseng, D.L. O'Meara, P.J. Tobin and V.S. Wang, Reduced gate leakage current and boron penetration of 0.18 μm 1.5V MOSFETs using integrated RTCVD oxynitride gate dielectric. In IEDM Techn. Digest (1998) pp. 98-101.
-
(1998)
IEDM Techn. Digest
, pp. 98-101
-
-
Tseng, H.1
O'Meara, D.L.2
Tobin, P.J.3
Wang, V.S.4
-
17
-
-
0007340171
-
Electrical characteristics of ultrathin [2.5 nm] gate quality LPCVD nitride/oxide films
-
ed. by C. Claeys, H. Iwai, G. Bronner and R. B. Fair (The Electrochem. Soc., Pennington) 99-18
-
E. Ibok, K. Ahmed and B. Ogle, Electrical characteristics of ultrathin [2.5 nm] gate quality LPCVD nitride/oxide films. In ULSI Science and Technology/1999, ed. by C. Claeys, H. Iwai, G. Bronner and R. B. Fair (The Electrochem. Soc., Pennington) 99-18 (1999) pp. 181-192.
-
(1999)
ULSI Science and Technology/1999
, pp. 181-192
-
-
Ibok, E.1
Ahmed, K.2
Ogle, B.3
-
18
-
-
0032096868
-
Tunneling Leakage current in oxynitride: Dependence on oxygen/nitride content
-
X. Quo and T.P. Ma, Tunneling Leakage current in Oxynitride: Dependence on oxygen/nitride content. IEEE Electron Dev. Lett. 19 (1998) pp. 207-209.
-
(1998)
IEEE Electron Dev. Lett.
, vol.19
, pp. 207-209
-
-
Quo, X.1
Ma, T.P.2
-
19
-
-
2942618387
-
Low frequency noise assessment of silicon substrates and process modules for deep submicron CMOS technologies
-
accepted for
-
C. Claeys, A. Mercha and E. Simoen, Low frequency noise assessment of silicon substrates and process modules for deep submicron CMOS technologies, accepted for J. Electrochem. Soc. 151 (2004).
-
(2004)
J. Electrochem. Soc.
, vol.151
-
-
Claeys, C.1
Mercha, A.2
Simoen, E.3
-
20
-
-
0035575912
-
Optimization of gate oxide nitridation 0.18 μm CMOS for low 1/f noise performance
-
M. Da Rold, E. Simoen, S. Mertens, M. Schaekers, G. Badenes, and S. Decoutere, Optimization of gate oxide nitridation 0.18 μm CMOS for low 1/f noise performance. Microelectron. Reliab, 41-42, (2001) pp 1933-1938.
-
(2001)
Microelectron. Reliab
, vol.41-42
, pp. 1933-1938
-
-
Da Rold, M.1
Simoen, E.2
Mertens, S.3
Schaekers, M.4
Badenes, G.5
Decoutere, S.6
-
21
-
-
0033307321
-
Ultrathin hafnium oxide with low leakage and excellent reliability for alternative gate dielectric application
-
B.H. Lee, W.-J. Qi, R. Nieh, Y. Jeo, K. Onishi and J.C. Lee, Ultrathin hafnium oxide with low leakage and excellent reliability for alternative gate dielectric application. In IEDM Techn. Digest (1999) pp. 133-136.
-
(1999)
IEDM Techn. Digest
, pp. 133-136
-
-
Lee, B.H.1
Qi, W.-J.2
Nieh, R.3
Jeo, Y.4
Onishi, K.5
Lee, J.C.6
-
22
-
-
0141604429
-
2 gate dielectrics
-
ed. by H.R. Huff, L. Fabry and S. Kishino (The Electrochem. Soc., Pennington), 2002-02
-
2 gate dielectrics. In Semiconductor Silicon 2002, ed. by H.R. Huff, L. Fabry and S. Kishino (The Electrochem. Soc., Pennington), 2002-02 (2002) pp. 929-942.
-
(2002)
Semiconductor Silicon 2002
, pp. 929-942
-
-
Hergenrother, J.M.1
Nigam, T.2
Wilk, G.D.3
Klemens, F.F.4
Monroe, D.5
Sorch, T.W.6
Bush, B.7
Green, M.L.8
Muller, D.A.9
Voyles, P.M.10
Grazul, J.L.11
Shero, E.J.12
Givens, M.E.13
Pomarede, C.14
Mazanec, M.15
Werkhoven, C.16
-
24
-
-
2342601803
-
Rare earth metal oxides for high-k gate insulator
-
ed. by H.R. Huff, L. Fabry and S. Kishino (The Electrochem. Soc., Pennington), 2002-02
-
S. Ohmi, S. Akama, A. Kikuchi, I. Kashiwaga, C. Ohsima, J. Taguchi, H. Yamamoto, K. Sto, M. Takeda, H. Ishiwara and H. Iwai, Rare Earth Metal Oxides for High-k Gate Insulator. In Semiconductor Silicon 2002, ed. by H.R. Huff, L. Fabry and S. Kishino (The Electrochem. Soc., Pennington), 2002-02 (2002) pp. 376-387.
-
(2002)
Semiconductor Silicon 2002
, pp. 376-387
-
-
Ohmi, S.1
Akama, S.2
Kikuchi, A.3
Kashiwaga, I.4
Ohsima, C.5
Taguchi, J.6
Yamamoto, H.7
Sto, K.8
Takeda, M.9
Ishiwara, H.10
Iwai, H.11
-
25
-
-
2342551539
-
Silicon technology trend from past to future - From milli to nanometers
-
March 16, Bangalore, India
-
H. Iwai, Silicon technology trend from past to future - From milli to nanometers, in Proceedings IEEE Workshop on Challenges in the deep Sub-Micron Era, March 16, Bangalore, India, (2002) pp. 1-61.
-
(2002)
Proceedings IEEE Workshop on Challenges in the Deep Sub-micron Era
, pp. 1-61
-
-
Iwai, H.1
-
26
-
-
2342659702
-
Integration issues of polysilicon with high-k dielectrics deposited by atomic layer chemical vapor deposition
-
ed. by H.R. Huff, L. Fabry and S. Kishino (The Electrochem. Soc., Pennington), 2002-02
-
W. Tsai, J. Chen, R. Cartier, E. Cartier, J. Kluth, O. Richard, M. Claes, Y.M. Lin, H. Nohira, T. Conard, M. Caymax, E. Young, W. Vandervorst, S. DeGendt and M. Heyns, Integration issues of polysilicon with high-k dielectrics deposited by atomic layer chemical vapor deposition. In Semiconductor Silicon 2002, ed. by H.R. Huff, L. Fabry and S. Kishino (The Electrochem. Soc., Pennington), 2002-02 (2002) pp. 747-760.
-
(2002)
Semiconductor Silicon 2002
, pp. 747-760
-
-
Tsai, W.1
Chen, J.2
Cartier, R.3
Cartier, E.4
Kluth, J.5
Richard, O.6
Claes, M.7
Lin, Y.M.8
Nohira, H.9
Conard, T.10
Caymax, M.11
Young, E.12
Vandervorst, W.13
Degendt, S.14
Heyns, M.15
-
27
-
-
2342663684
-
Study of diffusivity and electrical properties of Zr and Hf in silicon
-
ed. By H.R. Huff, L. Fabry and S. Kishino (The Electrochem. Soc., Pennington) 2002-02
-
O.F. Vyvenko, R. Sachdeva, A.A. Istratov, R. Armitage and E.R. Weber, Study of diffusivity and electrical properties of Zr and Hf in silicon. In Semiconductor Silicon 2002, ed. By H.R. Huff, L. Fabry and S. Kishino (The Electrochem. Soc., Pennington) 2002-02 (2002) pp. 440-451.
-
(2002)
Semiconductor Silicon 2002
, pp. 440-451
-
-
Vyvenko, O.F.1
Sachdeva, R.2
Istratov, A.A.3
Armitage, R.4
Weber, E.R.5
-
28
-
-
2342547744
-
-
(The Electrochem. Soc., Pennington) MA 200302 abstract nr. 223
-
E. Simoen, A. Mercha, L. Pantisano, C. Claeys and E. Young, Second Int. Symp on High Dielectric Constant Materials, (The Electrochem. Soc., Pennington) MA 200302 (2003) abstract nr. 223.
-
(2003)
Second Int. Symp on High Dielectric Constant Materials
-
-
Simoen, E.1
Mercha, A.2
Pantisano, L.3
Claeys, C.4
Young, E.5
-
29
-
-
2342495331
-
-
(The Electrochem. Soc., Pennington) MA 2003-02 abstract nr. 712
-
H. Sauddin, Y. Yoshihara, S. Ohmi, K. Tsutsui and H. Iwai, Second Int. Symp on High Dielectric Constant Materials, (The Electrochem. Soc., Pennington) MA 2003-02 (2003) abstract nr. 712.
-
(2003)
Second Int. Symp on High Dielectric Constant Materials
-
-
Sauddin, H.1
Yoshihara, Y.2
Ohmi, S.3
Tsutsui, K.4
Iwai, H.5
-
30
-
-
0007285058
-
Shallow junction challenges to rapid thermal processing
-
ed. by F. Roozeboom, M. C. Ozturk, J. C. Gelpey, K. G. Reid and D.-L. Kwong (The Electrochem. Soc., Pennington) PV 2000-09
-
L.A. Larsen and B.C. Covington, Shallow junction challenges to rapid thermal processing. In Rapid Thermal Processing and Other Short-Time Processing Technologies, ed. by F. Roozeboom, M. C. Ozturk, J. C. Gelpey, K. G. Reid and D.-L. Kwong (The Electrochem. Soc., Pennington) PV 2000-09 (2000) pp. 129-136.
-
(2000)
Rapid Thermal Processing and Other Short-time Processing Technologies
, pp. 129-136
-
-
Larsen, L.A.1
Covington, B.C.2
-
31
-
-
0034446827
-
Impact of the purity of silicon on the evolution of ion beam generated defects: From research to technology
-
ed. by C. L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer and H. J. Dawson (The Electrochem. Soc., Pennington) 2000-17
-
V. Privitera, Impact of the purity of silicon on the evolution of ion beam generated defects: From research to technology. In High Purity Silicon VI, ed. by C. L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer and H. J. Dawson (The Electrochem. Soc., Pennington) 2000-17 (2000) pp. 606-620.
-
(2000)
High Purity Silicon VI
, pp. 606-620
-
-
Privitera, V.1
-
32
-
-
0032028280
-
2- or As-implanted layers and their effect on the electrical performance of 0.15 μm MOSFETs
-
2- or As-implanted layers and their effect on the electrical performance of 0.15 μm MOSFETs. IEEE Trans. Electron Dev. 45 (1998) pp. 701-709.
-
(1998)
IEEE Trans. Electron Dev.
, vol.45
, pp. 701-709
-
-
Nishida, A.1
Murakami, E.2
Kimura, S.3
-
33
-
-
0007345466
-
Ultra-shallow junction formation by atomic layer doping
-
ed. by C. Claeys, F. Gonzalez, H. Murota and K. Saraswat (The Electrochem. Soc., Pennington) 2001-02
-
M. Koyanagi, Ultra-shallow junction formation by atomic layer doping. In ULSI Process Integration II, ed. by C. Claeys, F. Gonzalez, H. Murota and K. Saraswat (The Electrochem. Soc., Pennington) 2001-02 (2001) pp. 133-139.
-
(2001)
ULSI Process Integration II
, pp. 133-139
-
-
Koyanagi, M.1
-
34
-
-
2342609294
-
NiSi salicide for sub 100 nm CMOS
-
ed. by H.R. Huff, L. Fabry and S. Kishino (The Electrochem. Soc., Pennington) 2002-02
-
Q. Xiang, NiSi salicide for sub 100 nm CMOS. In Semiconductor Silicon 2002, ed. by H.R. Huff, L. Fabry and S. Kishino (The Electrochem. Soc., Pennington) 2002-02 (2002) pp. 354-375.
-
(2002)
Semiconductor Silicon 2002
, pp. 354-375
-
-
Xiang, Q.1
-
35
-
-
84907710117
-
Nickel vs. Ccobalt silicide integration for sub-50 nm CMOS
-
ed. By J. Franca and P. Freitas
-
B. Froment, M. Muller, H. Brut, R. Pantel, V.Carron, H. Achard, A. Halimaoui, F. Boeuf, F. Wacquant, C. Regneir, D. Ceccarelli, et al., Nickel vs. Ccobalt silicide integration for sub-50 nm CMOS. In Proc. ESSDERC2003, ed. By J. Franca and P. Freitas, (2003) pp. 215-218
-
(2003)
Proc. ESSDERC2003
, pp. 215-218
-
-
Froment, B.1
Muller, M.2
Brut, H.3
Pantel, R.4
Carron, V.5
Achard, H.6
Halimaoui, A.7
Boeuf, F.8
Wacquant, F.9
Regneir, C.10
Ceccarelli, D.11
-
36
-
-
17044371601
-
A new junction technology based on selective CVD of SiGe alloys for CMOS technology nodes beyond 30 nm
-
ed. by H.R. Huff, L. Fabry and S. Kishino (The Electrochem. Soc., Pennington) 2002-02
-
M.C. Ozturk, N. Presovic, J. Liu, H. Mo, I. Kang and S. Gannavaram, A new junction technology based on selective CVD of SiGe alloys for CMOS technology nodes beyond 30 nm. In Semiconductor Silicon 2002, ed. by H.R. Huff, L. Fabry and S. Kishino (The Electrochem. Soc., Pennington) 2002-02 (2002)pp. 761-773.
-
(2002)
Semiconductor Silicon 2002
, pp. 761-773
-
-
Ozturk, M.C.1
Presovic, N.2
Liu, J.3
Mo, H.4
Kang, I.5
Gannavaram, S.6
-
37
-
-
18044378965
-
Process technology for sub 100-nm CMOS devices
-
ed. by C. Claeys, F. Gonzalez, J. Murota and K. Saraswat (The Electrochem, Soc., Pennington) 2001-02
-
H. Wakabayashi, M. Ueki, M. Narihiro, K. Uejima, T. Fukai, M. Togo, T. Yamamoto, K. Takeuchi, Y. Ochiai and T. Mogami, Process technology for sub 100-nm CMOS devices. In ULSI Process Integration II, ed. by C. Claeys, F. Gonzalez, J. Murota and K. Saraswat (The Electrochem, Soc., Pennington) 2001-02 (2001) pp. 34-49.
-
(2001)
ULSI Process Integration II
, pp. 34-49
-
-
Wakabayashi, H.1
Ueki, M.2
Narihiro, M.3
Uejima, K.4
Fukai, T.5
Togo, M.6
Yamamoto, T.7
Takeuchi, K.8
Ochiai, Y.9
Mogami, T.10
-
38
-
-
0007285698
-
L-shape spacer architecture for low cost, high performance CMOS
-
ed. by C. Claeys, F. Gonzalez, J. Murota and K. Saraswat (The Electrochem. Soc., Pennington) 2001-02
-
E. Augendre, C. Perello, E. Vandamme, S. Pochet, R. Rooyackers, S. Beckx, M. de Potter, A. Lauwers and G. Badenes, L-shape spacer architecture for low cost, high performance CMOS. In ULSI Process Integration II, ed. by C. Claeys, F. Gonzalez, J. Murota and K. Saraswat (The Electrochem. Soc., Pennington) 2001-02 (2001) pp. 297-304.
-
(2001)
ULSI Process Integration II
, pp. 297-304
-
-
Augendre, E.1
Perello, C.2
Vandamme, E.3
Pochet, S.4
Rooyackers, R.5
Beckx, S.6
De Potter, M.7
Lauwers, A.8
Badenes, G.9
-
39
-
-
2342603463
-
Thin L-shaped spacers for CMOS devices
-
ed. by J. Franca and P. Freitas
-
E. Augendre, R. Rooyackers, M. de Potter de ten Broeck, E. Kunnen, S. Becks, G. Mannaert, C. Vrancken, V. Vassilev, T. Chiarella, M. Jurczak and I. Debusschere, Thin L-shaped spacers for CMOS devices. In Proc. ESSDERC 2003, ed. by J. Franca and P. Freitas, (2003) pp. 219-222
-
(2003)
Proc. ESSDERC 2003
, pp. 219-222
-
-
Augendre, E.1
Rooyackers, R.2
De Potter de ten Broeck, M.3
Kunnen, E.4
Becks, S.5
Mannaert, G.6
Vrancken, C.7
Vassilev, V.8
Chiarella, T.9
Jurczak, M.10
Debusschere, I.11
-
41
-
-
0007271029
-
SOI for CMOS logic and memory applications
-
ed. by C. Claeys, F. Gonzalez, J. Murota and K. Saraswat (The Electrochem. Soc., Pennington) 2001-02
-
D.K. Sadana, SOI for CMOS logic and memory applications. In ULSI Process Integration II, ed. by C. Claeys, F. Gonzalez, J. Murota and K. Saraswat (The Electrochem. Soc., Pennington) 2001-02 (2001) pp. 474-488.
-
(2001)
ULSI Process Integration II
, pp. 474-488
-
-
Sadana, D.K.1
-
42
-
-
2042487584
-
SOI technology: The future will not scale down
-
ed. by H.R. Huff, L. Fabry and S. Kishino (The Electrochem. Soc., Pennington) 2002-02
-
S. Cristoloveanu, SOI technology: The future will not scale down. In Semiconductor Silicon 2002, ed. by H.R. Huff, L. Fabry and S. Kishino (The Electrochem. Soc., Pennington) 2002-02 (2002) pp. 328-341.
-
(2002)
Semiconductor Silicon 2002
, pp. 328-341
-
-
Cristoloveanu, S.1
-
43
-
-
2342551076
-
Multiple gate silicon-on-insulator MOS transistors
-
ed. by J.A. Martino, M.A. Pavanello and N.I. Morimoto (The Electrochem. Soc., Pennington) 2003-09
-
J.P. Colinge, Multiple gate silicon-on-insulator MOS transistors, h Proc. Microelectronics Technology and Dives - SBMICRO 2003, ed. by J.A. Martino, M.A. Pavanello and N.I. Morimoto (The Electrochem. Soc., Pennington) 2003-09 (2003) pp. 1-17.
-
(2003)
Proc. Microelectronics Technology and Dives - SBMICRO 2003
, pp. 1-17
-
-
Colinge, J.P.1
-
44
-
-
29044440093
-
FinFET - A self-aligned double-gate MOSFET scalable to 20 nm
-
D. Hisamoto, W.-C. Lee, J. Kedzierski, H. Takeuchi, K. Asano, C. Juo, E. Anderson, T.-J. King, J.Bokor and C. Hu, FinFET - A self-aligned double-gate MOSFET scalable to 20 nm. IEEE Trans. Electron Dev. 47 (2000) pp. 2320-2325.
-
(2000)
IEEE Trans. Electron Dev.
, vol.47
, pp. 2320-2325
-
-
Hisamoto, D.1
Lee, W.-C.2
Kedzierski, J.3
Takeuchi, H.4
Asano, K.5
Juo, C.6
Anderson, E.7
King, T.-J.8
Bokor, J.9
Hu, C.10
-
45
-
-
0035334721
-
From SOI materials to innovative devices
-
F. Allibert, T. Ernst, J. Pretet, N. Hefyene, C. Perret, A. Zaslavsky and S. Cristoloveanu, From SOI materials to innovative devices. Solid-State Electron. 45 (2001) pp. 559-566.
-
(2001)
Solid-state Electron.
, vol.45
, pp. 559-566
-
-
Allibert, F.1
Ernst, T.2
Pretet, J.3
Hefyene, N.4
Perret, C.5
Zaslavsky, A.6
Cristoloveanu, S.7
-
46
-
-
0038614785
-
Hydrogen annealing effect on DC and low-frequency noise characteristics in CMOS FinFETs
-
J.-S. Lee, Y.-K. Choi, D. Ha, S. Balasubramanian, T.-J. King and J. Bokor, Hydrogen annealing effect on DC and low-frequency noise characteristics in CMOS FinFETs. IEEE Electron Dev. Lett. 24 (2003) pp. 186-188.
-
(2003)
IEEE Electron Dev. Lett.
, vol.24
, pp. 186-188
-
-
Lee, J.-S.1
Choi, Y.-K.2
Ha, D.3
Balasubramanian, S.4
King, T.-J.5
Bokor, J.6
-
47
-
-
0009248832
-
Potential of SiGe channel MOSFETs for a submicron CMOS technology
-
ed. S. Luryo, J. Xu and A. Zalavsky, John Wiley & Sons
-
J. Alieu, T. Skotnicki, P. Bouillon, J.L. Regollini, A. Souifi, G. Guilot and G. Bremond, Potential of SiGe channel MOSFETs for a submicron CMOS technology. In Future trends in microelectronics, ed. S. Luryo, J. Xu and A. Zalavsky, John Wiley & Sons (1999) pp. 143-153.
-
(1999)
Future Trends in Microelectronics
, pp. 143-153
-
-
Alieu, J.1
Skotnicki, T.2
Bouillon, P.3
Regollini, J.L.4
Souifi, A.5
Guilot, G.6
Bremond, G.7
-
48
-
-
0035418872
-
Strained Si on insulator (strained SOI) MOSFETs - Concepts, structures and device characteristics
-
S. Tagai, T.Mizuno, N. Sugiyama, T. Tezuka and A. Kurobe, Strained Si on insulator (strained SOI) MOSFETs - Concepts, structures and device characteristics. IEICE Trans. Electronics E-84C (2001) pp. 1043-1050.
-
(2001)
IEICE Trans. Electronics
, vol.E-84C
, pp. 1043-1050
-
-
Tagai, S.1
Mizuno, T.2
Sugiyama, N.3
Tezuka, T.4
Kurobe, A.5
-
49
-
-
0036474993
-
Design and fabrication of 50 nm thin-body p-MOSFETs with a SiGe heterostructure channel
-
Y.-C. Yeo, V. Subramanian, J. Kedzierski, P. Xuan, T.J. King, J. Bokor and C. Hu, Design and fabrication of 50 nm thin-body p-MOSFETs with a SiGe heterostructure channel IEEE Trans. Electron Dev. 49 (2002) pp. 279-286.
-
(2002)
IEEE Trans. Electron Dev.
, vol.49
, pp. 279-286
-
-
Yeo, Y.-C.1
Subramanian, V.2
Kedzierski, J.3
Xuan, P.4
King, T.J.5
Bokor, J.6
Hu, C.7
-
50
-
-
2342556535
-
SiGeC device applications
-
ed. by H.R. Huff, L. Fabry and S. Kishino (The Electrochem. Soc., Pennington) 2002-02
-
H.J. Osten, SiGeC device applications. In Semiconductor Silicon 2002, ed. by H.R. Huff, L. Fabry and S. Kishino (The Electrochem. Soc., Pennington) 2002-02 (2002) pp. 342-353.
-
(2002)
Semiconductor Silicon 2002
, pp. 342-353
-
-
Osten, H.J.1
-
51
-
-
2342661203
-
Emerging device solutions for the post-classical CMOS era
-
ed. by C. Claeys, F. Gonzalez, J. Murota, P. Fazan and R. Singh (The Electrochem. Soc., Pennington) 2003-06
-
K. De Meyer, N. Collaert, S. Kubicek, A. Kottantharayil, H. van Meer and P. Verheyen, Emerging device solutions for the post-classical CMOS era. In ULSI Process Integration III, ed. by C. Claeys, F. Gonzalez, J. Murota, P. Fazan and R. Singh (The Electrochem. Soc., Pennington) 2003-06 (2003) pp. 291-305.
-
(2003)
ULSI Process Integration III
, pp. 291-305
-
-
De Meyer, K.1
Collaert, N.2
Kubicek, S.3
Kottantharayil, A.4
Van Meer, H.5
Verheyen, P.6
-
52
-
-
2342557100
-
Electrical properties of nanometer-scale MOSFETs
-
ed. by H.R. Huff, L. Fabry and S. Kishino (The Electrochem. Soc., Pennington) 2002-02
-
H. Kawaura and T. Sakamoto, Electrical properties of nanometer-scale MOSFETs. In Semiconductor Silicon 2002, ed. by H.R. Huff, L. Fabry and S. Kishino (The Electrochem. Soc., Pennington) 2002-02 (2002) pp. 606-632.
-
(2002)
Semiconductor Silicon 2002
, pp. 606-632
-
-
Kawaura, H.1
Sakamoto, T.2
-
53
-
-
0033116184
-
Single-electron devices and their applications
-
K.K. Likharev, Single-electron devices and their applications. Proc. IEEE 87 (1999) pp. 606-632
-
(1999)
Proc. IEEE
, vol.87
, pp. 606-632
-
-
Likharev, K.K.1
-
55
-
-
0005836651
-
Single- and multi-wall carbon nanotubes field-effect transistors
-
R. Martel, T. Schmidt, H.R. Shea, T. Hertel and P. Avouris, Single- and multi-wall carbon nanotubes field-effect transistors. Appl. Phys. Lett. 73 (1998) pp. 2447-2479.
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 2447-2479
-
-
Martel, R.1
Schmidt, T.2
Shea, H.R.3
Hertel, T.4
Avouris, P.5
|