SCOPUS 정보 검색 플랫폼

Volumn 19, Issue 18, 2009, Pages 2797-2802

Novel chemically amplified resists incorporating anionic photoacid generator functional groups for sub-50-nm half-pitch lithography

(7) Gonsalves, Kenneth E a Wang, Mingxing a Lee, Cheng Tsung b Yueh, Wang c Tapia Tapia, Melina d Batina, Nikola d Henderson, Clifford L b

a UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE (United States)

b Georgia Institute of Technology (United States)

c INTEL CORPORATION (United States)

d DEPARTAMENTO DE QUÍMICA (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

ADAMANTYL METHACRYLATES; AFM; CHEMICALLY AMPLIFIED RESISTS; ELECTRON-BEAM PATTERNING; HYDROXYSTYRENE; INTERFERENCE LITHOGRAPHIES; PATTERN SIZES; PHOTO ACID GENERATORS; POLYMER RESISTS; RELATIVE SENSITIVITIES; TRIFLUOROMETHYL;

ELECTRON BEAMS; FUNCTIONAL GROUPS; ISOMERS; PHOTORESISTS; POLYMERS; SURFACE ROUGHNESS;

PHOTORESISTORS;

EID: 65149099102 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/b818612j Document Type: Article

Times cited : (29)

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