Effects of photoacid generator incorporation into the polymer main chain on 193 nm chemically amplified resist behavior and lithographic performance

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 6, 2007, Pages 2136-2139

  Lee, Cheng Tsung ^a   Henderson, Clifford L ^a   Wang, Mingxing ^b   Gonsalves, Kenneth E ^b   Yueh, Wang ^c  

^a Georgia Institute of Technology   (United States)

^b UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE   (United States)

^c INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LINEWIDTH ROUGHNESS (LWR); PHOTOACID GENERATOR (PAG); RESIST MATERIALS;

BONDING; DIFFUSION IN LIQUIDS; LINEWIDTH; LITHOGRAPHY; SEMICONDUCTOR MATERIALS; SENSITIVITY ANALYSIS;

POLYMERS;

EID: 37149033103     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2801868     Document Type: Article

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