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Volumn 40, Issue 23, 2007, Pages 8220-8224

New anionic photoacid generator bound polymer resists for EUV lithography

Author keywords

[No Author keywords available]

Indexed keywords

ACID GENERATING EFFICIENCY; ADAMANTYL METHACRYLATE (EA); BOUND POLYMERS; HYDROXYSTYRENE;

EID: 36348978735     PISSN: 00249297     EISSN: None     Source Type: Journal    
DOI: 10.1021/ma0715066     Document Type: Article
Times cited : (30)

References (24)
  • 1
    • 0013231540 scopus 로고    scopus 로고
    • International Technology Roadmap for Semiconductors ITRS
    • International Technology Roadmap for Semiconductors (ITRS). http:// public.itrs.net/, Lithography.
    • Lithography
  • 22
    • 0001104370 scopus 로고
    • Following the Acid: Effect of Acid Surface Depletion on Phenolic Polymers
    • Microelectronics Technology;, American Chemical Society: Washington, DC
    • Thackeray, J. W.; Denison, M. D.; Fedynyshyn, T. H.; Kang, D.; Sinta, R. Following the Acid: Effect of Acid Surface Depletion on Phenolic Polymers. In Microelectronics Technology; ACS Symposium Series 614; American Chemical Society: Washington, DC, 1995; p 110.
    • (1995) ACS Symposium Series , vol.614 , pp. 110
    • Thackeray, J.W.1    Denison, M.D.2    Fedynyshyn, T.H.3    Kang, D.4    Sinta, R.5
  • 24
    • 36348992815 scopus 로고    scopus 로고
    • Private communication from Prof. C. L. Henderson and C. Lee at Georgia Institute of Technology
    • Private communication from Prof. C. L. Henderson and C. Lee at Georgia Institute of Technology.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.