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Volumn 517, Issue 11, 2009, Pages 3222-3226
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Stress induced crystallization of hydrogenated amorphous silicon
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Author keywords
Crystallization; Raman spectroscopy; Silicon; Stress induced crystallization; Thin film stress; X ray diffraction
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Indexed keywords
AMORPHOUS FILMS;
ARCHITECTURAL ACOUSTICS;
CRYSTALLIZATION;
DIFFRACTION;
HYDROGENATION;
METALLIC FILMS;
MOLECULAR BEAM EPITAXY;
NONMETALS;
RAMAN SCATTERING;
RAMAN SPECTROSCOPY;
SEMICONDUCTING SILICON COMPOUNDS;
SILICON NITRIDE;
SILICON WAFERS;
SPECTRUM ANALYSIS;
STRENGTH OF MATERIALS;
THERMAL EXPANSION;
THERMAL STRESS;
THERMOELASTICITY;
THIN FILM DEVICES;
THIN FILMS;
X RAY DIFFRACTION;
AMORPHOUS SILICON FILMS;
CAPPING LAYERS;
COEFFICIENTS OF THERMAL EXPANSIONS;
CRYSTALLINITY;
HYDROGENATED AMORPHOUS SILICON FILMS;
HYDROGENATED AMORPHOUS SILICONS;
RADIO FREQUENCY MAGNETRON SPUTTERING;
RESIDUAL THERMAL STRESS;
SILICON FILMS;
STRESS-INDUCED CRYSTALLIZATION;
THERMALLY OXIDIZED SILICONS;
THIN FILM ARCHITECTURES;
THIN FILM STRESS;
AMORPHOUS SILICON;
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EID: 62849093372
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2008.10.114 Document Type: Article |
Times cited : (27)
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References (34)
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