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Volumn 153-155, Issue , 1998, Pages 1-10

Pressure and stress effects on diffusion in Si

Author keywords

Antimony; Arsenic; Biaxial Stress; Boron; Diffusion Mechanism; Dopant Diffusion; Germanium; Nonhydrostatic Stress; Self Diffusion; Silicon; Thermodynamics

Indexed keywords

ANTIMONY; ARSENIC; BORON; CALCULATIONS; GERMANIUM; HYDRAULICS; HYDROSTATIC PRESSURE; POINT DEFECTS; SILICON; SINGLE CRYSTALS; THERMODYNAMICS;

EID: 77950580260     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/ddf.153-155.1     Document Type: Article
Times cited : (34)

References (34)
  • 25
    • 0007709843 scopus 로고    scopus 로고
    • Proc. 4th Int. Symp. on Process Physics and Modeling in Semiconductor Devices, eds. G.R. Srinivasan, C.S. Murthy, and S.T. Dunham, Electrochem. Soc., Pennington, NJ
    • N.E.B. Cowern, W.J. Kersten, R.C.M. de Kruif, J.G.M. van Berkum, W.B. de Boer, D.J. Gravesteijn and C.W.T. Bulle-Liewma, in Proc. 4th Int. Symp. on Process Physics and Modeling in Semiconductor Devices, eds. G.R. Srinivasan, C.S. Murthy, and S.T. Dunham, Electrochem. Soc. Proc. Vol. 96-4 (Electrochem. Soc., Pennington, NJ, 1996).
    • (1996) Electrochem. Soc. Proc. , vol.96 , Issue.4
    • Cowern, N.E.B.1    Kersten, W.J.2    De Kruif, R.C.M.3    Van Berkum, J.G.M.4    De Boer, W.B.5    Gravesteijn, D.J.6    Bulle-Liewma, C.W.T.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.