Polycrystalline silicon films by aluminium-induced crystallisation: Growth process vs. silicon deposition method

Thin Solid Films

Volumn 451-452, Issue , 2004, Pages 328-333

  Pihan, E ^a   Slaoui, A ^a   Roca i Cabarrocas, P ^b   Focsa, A ^a  

^a UMR 7005   (France)

^b LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

Aluminium induced crystallisation; Large grain; Plasma enhanced CVD; Silicon; Sputtering; Thin film

Indexed keywords

ANNEALING; CRYSTALLIZATION; DEPOSITION; ELECTRON BEAMS; EVAPORATION; GRAIN SIZE AND SHAPE; OXIDATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; POLYSILICON; SCANNING ELECTRON MICROSCOPY;

ALUMINIUM-INDUCED CRYSTALLIZATION; LARGE GRAINS;

THIN FILMS;

EID: 17644437435     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.10.121     Document Type: Conference Paper

References (6)

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5. J. Schneider, J. Klein, M. Muske, A. Schöpke, S. Gall, W. Fuhs, Third World Conference on Photovoltaic Energy Conversion, WCPEC3, Osaka, May 2003.
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