Mechanism of aluminum-induced layer exchange upon low-temperature annealing of amorphous Si/polycrystalline Al bilayers

Journal of Applied Physics

Volumn 102, Issue 11, 2007, Pages

  Wang, J Y ^a   Wang, Z M ^a   Mittemeijer, E J ^a  

^a MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; AMORPHOUS SILICON; ANNEALING; GRAIN BOUNDARIES; POLYCRYSTALLINE MATERIALS;

AL BILAYERS; ALUMINUM-INDUCED LAYER EXCHANGE (ALILE);

METALLIC FILMS;

EID: 37149000922     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2822275     Document Type: Article

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