Influence of NH3-plasma pretreatment before Si3N 4 passivation film deposition on current collapse in AlGaN/GaN-HEMTs

IEICE Transactions on Electronics

Volumn E89-C, Issue 7, 2006, Pages 1052-1056

  Hoshi, Shinichi ^a   Marui, Toshiharu ^a   Itoh, Masanori ^a   Sano, Yoshiaki ^a   Seki, Shouhei ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

AlGaN GaN HEMTs; Current collapse; NH3 plasma pretreatment; Si3N4 passivation film

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDE; NITROGEN COMPOUNDS; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON COMPOUNDS; STOICHIOMETRY; THRESHOLD VOLTAGE;

ALGAN/GAN-HEMTS; CURRENT COLLAPSE; NH3 PLASMA PRETREATMENT; SI3N4 PASSIVATION FILM;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33747892406     PISSN: 09168524     EISSN: 17451353     Source Type: Journal    
DOI: 10.1093/ietele/e89-c.7.1052     Document Type: Conference Paper

References (7)

1. T. Hashizume and R. Nakasaki, "Discrete surface state related to ni trogen-vacancy defect on plasma-treated GaN surfaces," Appl. Phys. Lett., vol.80, no.24, pp.4564-4566, June 2002.
2. S.C. Binari, K. Ikossi, J.A. Roussos, W. Kruppa, D. Park, H.B. Dietrich, D.D. Koleske, A.E. Wickenden, and R.L. Henry, "Trapping effects and microwave power performance in AlGaN/GaN HEMTs," IEEE Trans. Electron Devices, vol.48, no.3, pp.465-471, March 2001.
3. R. Vetury, N.Q. Zhang, S. Keller, and U.K. Mishra, "The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs," IEEE Trans. Electron Devices, vol.48, no.3, pp.560-566, March 2001.
4. T. Nanjo, N. Miura, T. Oishi, M. Suita, Y. Abe, T. Ozeki, S. Nakatsuka, A. Inoue, T. Ishikawa, Y. Matsuda, H. Ishikawa, and T. Egawa, "Improvement of DC and RF characteristics of AlGaN/GaN high electron mobility transistors by thermally annealed Ni/Pt/Au Schottky gate," Jpn. J. Appl. Phys., vol.43, no.4B, pp.1925-1929, 2004.
5. 3 dielectric," Appl. Phys. Lett., vol.83, no. 14, pp.2952-2954, Oct. 2003.
6. H. Okita, K. Kaifu, J. Mita, T. Yamada, Y. Sano, H. Ishikawa, T. Egawa, and T. Jimbo, "High transconductance AlGaN/GaN-HEMT with recessed gate on sapphire substrate," Phys. Stat. Sol. (a), vol.200, no.1, pp.187-190, 2003.
7. S.W. King, J.P. Barnak, M.D. Bremser, K.M. Tracy, C. Ronning, R.F. Davis, and R.J. Nemanich, "Cleaning of AlN and GaN surfaces," J. Appl. Phys., vol.84, no.9, pp.5248-5260, Nov. 1998.