Piezoresistance effect of strained and unstrained fully-depleted silicon-on-insulator MOSFETs integrating a HfO2/TiN gate stack

Solid-State Electronics

Volumn 53, Issue 3, 2009, Pages 392-396

  Rochette, F ^a,b   Casse M ^a   Mouis, M ^b   Haziot, A ^b   Pioger, T ^b   Ghibaudo, G ^b   Boulanger, F ^a  

^a CEA LETI   (France)

^b IMEP LAHC   (France)

Author keywords

Biaxial stress; FD SOI; Fully depleted silicon on insulator; MOSFET; Piezoresistance; Shear stress; Strained silicon; Uniaxial stress

Indexed keywords

ELECTRON MOBILITY; FINITE DIFFERENCE METHOD; HAFNIUM COMPOUNDS; LOGIC GATES; MICROSENSORS; NONMETALS; SEMICONDUCTING SILICON COMPOUNDS; SHEAR STRESS; STRENGTH OF MATERIALS; TIN; TITANIUM COMPOUNDS; TITANIUM NITRIDE;

BIAXIAL STRESS; FD-SOI; FULLY-DEPLETED SILICON-ON-INSULATOR; MOSFET; PIEZORESISTANCE; STRAINED SILICON; UNIAXIAL STRESS;

MOSFET DEVICES;

EID: 61349104284     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.01.017     Document Type: Article

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