Experimental evidence and extraction of the electron mass variation in [1 1 0] uniaxially strained MOSFETs

Solid-State Electronics

Volumn 51, Issue 11-12, 2007, Pages 1458-1465

  Rochette, F ^a,b   Casse M ^a   Mouis, M ^b   Reimbold, G ^a   Blachier, D ^a   Leroux, C ^a   Guillaumot, B ^c   Boulanger, F ^a  

^a CEA LETI   (France)

^b IMEP LAHC   (France)

^c STMICROELECTRONICS   (France)

Author keywords

Effective mass; Extraction technique; Mobility; MOSFET; Strained silicon; Uniaxial stress

Indexed keywords

ANISOTROPY; ELECTRON MOBILITY; MOSFET DEVICES; SILICON; TENSILE STRESS;

CONDUCTION MASS; ELECTRON MASS VARIATION; UNIAXIAL STRESS;

SOLID STATE PHYSICS;

EID: 36248973679     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.09.031     Document Type: Article

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