Using piezoresistance model with C-R conversion for modeling of strain-induced mobility

IEEE Electron Device Letters

Volumn 29, Issue 9, 2008, Pages 1062-1064

  Tsang, Y L ^a   O'Neill, Anthony G ^a   Gallacher, Barry J ^a   Olsen, Sarah H ^a  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

CMOS; Mobility; MOSFET; Nanowire; Strained silicon; Uniaxial stress

Indexed keywords

COMPUTER NETWORKS; ELECTRIC WIRE; MONTE CARLO METHODS;

CMOS; MOBILITY; MOSFET; NANOWIRE; STRAINED SILICON; UNIAXIAL STRESS;

MOSFET DEVICES;

EID: 50649105080     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2001682     Document Type: Article

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