Fabrication and characterization of GaAs MIS devices with N-rich PECVD Si x N y dielectric

Applied Surface Science

Volumn 181, Issue 3-4, 2001, Pages 179-184

  Pal, Suparna ^a   Bose, D N ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

Annealing effect; C V; Conductance method; GaAs; MIS device; PECVD; Silicon nitride; Surface passivation

Indexed keywords

ANNEALING; DIELECTRIC FILMS; DIFFERENTIAL EQUATIONS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MOSFET DEVICES; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE;

SURFACE PASSIVATION;

MIS DEVICES;

EID: 0035928965     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00196-9     Document Type: Article

References (14)