Intrinsic gettering of Czochralski silicon annealed in argon and nitrogen atmosphere

Physica B: Condensed Matter

Volumn 307, Issue 1-4, 2001, Pages 40-44

  Shui, Qiong ^a   Yang, Deren ^a   Li, Liben ^a   Pi, Xiaodong ^a   Que, Duanlin ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

Denuded zone; Intrinsic gettering; Nitrogen; Silicon

Indexed keywords

ANNEALING; ARGON; CRYSTAL GROWTH FROM MELT; DIFFUSION; DOPING (ADDITIVES); ETCHING; NITROGEN; PRECIPITATION (CHEMICAL);

INTRINSIC GETTERING;

SILICON;

EID: 0035576427     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00603-2     Document Type: Article

References (16)

1. Defects in silicon III