Oxide precipitates in annealed nitrogen-doped 300 mm CZ-SI

Materials Science in Semiconductor Processing

Volumn 5, Issue 4-5 SPEC., 2002, Pages 391-396

  Akhmetov, V D ^a,b   Richter, H ^a,b   Lysytskiy, O ^b   Wahlich, R ^c   Muller T ^c  

^a IHP   (Germany)

^b BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^c SILTRONIC AG   (Germany)

Author keywords

300 mm Silicon; Intrinsic gettering; Nitrogen doping; Precipitates

Indexed keywords

ANNEALING; CRYSTAL GROWTH; GETTERS; HEAT TREATMENT; INFRARED RADIATION; LIGHT SCATTERING; MICROSCOPIC EXAMINATION; NITROGEN; OXIDES; PRECIPITATION (CHEMICAL); SEMICONDUCTOR DOPING; TOMOGRAPHY;

INTRINSIC GETTERING (IG);

SILICON WAFERS;

EID: 0036966829     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(02)00136-1     Document Type: Conference Paper

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