Denuded zone in Czochralski silicon wafer with high carbon content

Journal of Physics Condensed Matter

Volumn 18, Issue 49, 2006, Pages 11131-11138

  Chen, Jiahe ^a   Yang, Deren ^a   Ma, Xiangyang ^a   Que, Duanlin ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; INTEGRATED CIRCUITS; OXYGEN;

BULK MICRO DEFECTS (BMD); CZOCHRALSKI SILICON; OXYGEN PRECIPITATES;

SILICON WAFERS;

EID: 33846043579     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/18/49/007     Document Type: Article

References (28)

1. Kung C Y 1989 J. Appl. Phys. 65 4654
2. Föll H, Gösele U and Kolbesen B O 1977 J. Cryst. Growth 40 90
3. Wolf E, Schröder W, Riemann H and Lux B 1996 Mater. Sci. Eng. B 36 209
4. Barraclough K G and Wilkes J G 1986 Semiconductor Silicon ed H R Huff, T Abe and B Kolbesen (Pennington, NJ: Electrochemical Society) p889
5. Kolbesen B O and Miihlbauer A 1982 Solid-State Electron. 25 759
6. Bergholz W and Gilles D 2000 Phys. Status Solidi b 222 5
7. Falster R, Voronkov V V and Quast F 2000 Phys. Status Solidi b 222 219
8. Nakai K, Kitahara K, Ohta Y, Ikari A and Tanaka M 2004 Japan. J. Appl. Phys. 43 1247
9. Bialas F, Winkler R and Dietrich H 2001 Microelectron. Eng. 56 157
10. Cui C, Yang D, Yu X, Ma X, Li L and Que D 2004 Semicond. Sci. Technol. 19 548
11. Liu P, Ma X, Zhang J, Li L and Que D 2000 J. Appl. Phys. 87 3669
12. Chen J, Yang D, Ma X and Que D 2006 J. Cryst. Growth 290 61
13. Karoui A, Sahtout K F, Kvit A, Rozgonyi G A and Yang D 2002 Appl. Phys. Lett. 80 2114
14. McHugo S, Weber E, Mizuno M and Kirscht F 1995 Appl. Phys. Lett. 66 2840
15. Kissinger G, Gräf D, Lambert U, Grabolla T and Richter H 1997 Semicond. Sci. Technol. 12 933
16. Gong L, Ma X, Tian D, Fu L and Yang D 2005 Semicond. Sci. Technol. 20 228
17. Wada K, Nakanishi H, Takaoka H and Inoue N 1982 J. Cryst. Growth 57 535
18. Isomae S, Aoki S and Watanabe K 1983 J. Appl. Phys. 55 817
19. Newman R C 2000 J. Phys.: Condens. Matter 12 R335
20. Hu S M 1980 J. Appl. Phys. 51 5945
21. Livingston P M, Messoloras S, Newman R C, Pike B C, Stewart R J, Binns N J, Brown W P and Wilkes J G 1984 J. Phys. C: Solid State Phys. 17 6253
22. Hu S M 1986 Mater. Res. Soc. Symp. 59 249
23. Bailey W E, Bowling R A and Bean K E 1985 J. Electrochem. Soc. 132 1721
24. Tan T Y and Kung C Y 1986 J. Appl. Phys. 59 917
25. Kanamori M and Tsuya H 1985 Japan. J. Appl. Phys. 24 557
26. Ogino M 1982 Appl. Phys. Lett. 41 847
27. Shimura F 1986 J. Appl. Phys. 59 3251
28. Shimura F, Baiardo J P and Fraundort P 1985 Appl. Phys. Lett. 46 941