Crystal defects in epitaxial layer on nitrogen-doped Czochralski-grown silicon substrate (II) - Suppression of the crystal defects in epitaxial layer by the control of crystal growth condition and carbon co-doping

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 A, 2004, Pages 1247-1253

  Nakai, Katsuhiko ^a   Kitahara, Koichi ^a   Ohta, Yasumitsu ^a   Ikari, Atsushi ^a   Tanaka, Masahiro ^a  

^a Wacker NSCE Corporation   (Japan)

Author keywords

Carbon; Crystal defect; Czochralski; Epitaxial layer; Nitrogen; Silicon

Indexed keywords

CARBON; CONCENTRATION (PROCESS); CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); EPITAXIAL GROWTH; HEAT TREATMENT; LIGHT SCATTERING; NITROGEN; OPTICAL MICROSCOPY; OPTICAL SYSTEMS; OXIDATION; PRECIPITATION (CHEMICAL); SPECTROSCOPIC ANALYSIS; SUBSTRATES;

CARBON CO-DOPING; ELLIPTICAL PIT (E-PIT); EPITAXIAL LAYER; NITROGEN-DOPED SUBSTRATES (N-SF);

CRYSTAL GROWTH FROM MELT;

EID: 3042748472     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.1247     Document Type: Article

References (10)

1. Katsuhiko Nakai, Koichi Kitahara, Yasumitsu Ohta, Atsushi Ikari and Masahiro Tanaka: to be published in Jpn. J. Appl. Phys.
2. K. Nakai, H. Yokota, J. Takahashi, A. Tachikawa, K. Kitahara, A. Ikari and M. Tanaka: Proc. Forum on the Science and Technology of Silicon Material 2001, p. 73.
3. K. Moriya: J. Cryst. Growth 94 (1989) 182.
4. K. Nakai, Y. Inoue, H. Yokota, A. Ikari, J. Takahashi and W. Ohashi: Proc. 3th Int. Symp. on Advanced Science and Technology of Silicon Materials, Hawaii, 2000, p. 88.
5. K. Nakai, Y. Inoue, H. Yokota, A. Ikari, J. Takahashi, A. Tachikawa, K. Kitahara, Y. Ohta, and W. Ohashi: J. Appl. Phys. 89 (2001) 4301.
6. V. V. Voronkov: J. Cryst. Growth 59 (1982) 625.
7. J. Takahashi, K. Nakai, K. Kawakami, Y. Inoue, H. Yokota, A. Tachikawa, A. Ikari and W. Ohashi: Jpn. J. Appl. Phys. 42 (2003) 363.
8. M. Hasebe, Y. Takeoka, S. Shinoyama and S. Naito: Jpn. J. Appl. Phys. 28 (1989) L1999.
9. K. Sueoka, M. Akatsuka, K. Nishihara, T. Yamamoto and S. Kobayashi: Mater. Sci. Forum 196-201 (1995) 1737.
10. K. Sueoka, M. Akatsuka, M. Yonemura, T. Ono, E. Asayama, Y. Koike and S. Sadamitsu: 9th Int. Autumn Meeting of Gettering and Defect Engineering in Semiconductor Technology GADEST 2001, Catania, Italy, 2001, p. 49.