Ni Schottky diodes on cubic GaN

Applied Physics Letters

Volumn 88, Issue 15, 2006, Pages

  As, D J ^a   Potthast, S ^a   Fernandez, J ^a   Schormann J ^a   Lischka, K ^a   Nagasawa, H ^b   Abe, M ^b  

^a UNIVERSITY OF PADERBORN   (Germany)

^b HOYA Advanced Semiconductor Technologies Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DOPING (ADDITIVES); ELECTRIC FIELD EFFECTS; EVAPORATION; GALLIUM NITRIDE; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; NICKEL; PLASMAS; SEMICONDUCTOR MATERIALS; THERMAL EFFECTS; VOLTAGE CONTROL;

CUBIC GAN; NI-SEMICONDUCTOR INTERFACE; THERMAL ANNEALING; THIN SURFACE BARRIER;

SCHOTTKY BARRIER DIODES;

EID: 33646201409     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2193401     Document Type: Article

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