Influence of surface defects on the characteristics of GaN Schottky diodes

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 1085-1090

  Duboz, J Y ^a   Binet, F ^a   Laurent, N ^a   Rosencher, E ^a   Scholz, F ^a   Harle, V ^a   Briot, O ^a   Gil, B ^a   Aulombard, R L ^a  

^a THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DEFECTS; HYDROCHLORIC ACID; LEAKAGE CURRENTS; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE TREATMENT;

ELECTRICAL DEFECTS; NITRIDE SEMICONDUCTORS; SURFACE CHEMICAL TREATMENT; SURFACE DEFECTS;

SCHOTTKY BARRIER DIODES;

EID: 0030672458     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)