Fabrication of GaN-based nanoscale device structures utilizing focused ion beam induced Pt deposition

Journal of Applied Physics

Volumn 100, Issue 2, 2006, Pages

  Motayed, Abhishek ^a,b   Davydov, Albert V ^a   Vaudin, Mark D ^a   Levin, Igor ^a   Melngailis, John ^b   Mohammad, S N ^c,d  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

^c UNIVERSITY OF MARYLAND   (United States)

^d Howard University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FOCUSED ION BEAM; FOCUSED ION BEAM (FIB); SEMICONDUCTING BEHAVIOR;

ANNEALING; DEPOSITION; ELECTRIC CURRENTS; GALLIUM NITRIDE; ION BEAMS; OHMIC CONTACTS; PLATINUM; SCHOTTKY BARRIER DIODES; SUBSTRATES;

NANOSTRUCTURED MATERIALS;

EID: 33746832816     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2215354     Document Type: Article

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