Schottky mechanism for Ni/Au contact with chlorine-treated n-type GaN layer

Journal of Applied Physics

Volumn 101, Issue 2, 2007, Pages

  Chen, Po Sung ^a   Lee, Tsung Hsin ^b   Lai, Li Wen ^a   Lee, Ching Ting ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINATION; GALLIUM NITRIDE; GOLD; NICKEL; PHOTOLUMINESCENCE; SCHOTTKY BARRIER DIODES;

PHOTOLUMINESCENCE INTENSITY; PHOTOLUMINESCENCE MEASUREMENTS; SURFACE STATES;

ELECTRIC CONTACTS;

EID: 33847753885     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2427100     Document Type: Article

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