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Volumn 9, Issue 3, 2009, Pages 598-604
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Effects of process parameters on the properties of silicon oxide films using plasma enhanced chemical vapor deposition with tetramethoxysilane
a
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Author keywords
Nitrogen incorporated silicon oxide thin films; Optical emission spectroscopy; Plasma enhanced chemical vapor deposition; Silicon oxide thin film; Tetramethoxysilane
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Indexed keywords
ATOMIC SPECTROSCOPY;
CAPACITANCE;
CHEMICAL BONDS;
CHEMICAL PROPERTIES;
DEPOSITION;
DEPOSITION RATES;
DIELECTRIC DEVICES;
ELECTRIC DISCHARGES;
ELECTRIC PROPERTIES;
ELECTRODEPOSITION;
EMISSION SPECTROSCOPY;
FOURIER TRANSFORM INFRARED SPECTROSCOPY;
FOURIER TRANSFORMS;
GASES;
INDUCTIVELY COUPLED PLASMA;
INFRARED SPECTROSCOPY;
LIGHT EMISSION;
LOW PRESSURE CHEMICAL VAPOR DEPOSITION;
MOLECULAR SPECTROSCOPY;
MOS CAPACITORS;
NITROGEN;
NONMETALS;
OPTICAL EMISSION SPECTROSCOPY;
OPTICAL PROPERTIES;
ORGANIC POLYMERS;
OXIDE FILMS;
OXIDES;
OXYGEN;
PHASE INTERFACES;
PHOTORESISTS;
PLASMA DEPOSITION;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
PLASMAS;
REFRACTIVE INDEX;
SEMICONDUCTING SILICON COMPOUNDS;
SILICA;
SILICON COMPOUNDS;
SOLIDS;
SPECTROSCOPIC ANALYSIS;
SPECTRUM ANALYSIS;
THIN FILM DEVICES;
THIN FILMS;
VAPORS;
CAPACITANCE VOLTAGES;
CHEMICAL BONDINGS;
DEPOSITED FILMS;
DEPOSITION PARAMETERS;
ELECTRICAL PROPERTIES;
FOURIER TRANSFORM INFRARED;
GAS PRESSURES;
GROWTH CHARACTERISTICS;
ICP POWERS;
IN-SITU;
INTERFACE TRAP DENSITIES;
NITROGEN CONTENTS;
OXYGEN PARTIAL PRESSURES;
PARTIAL PRESSURE RATIOS;
PROCESS PARAMETERS;
RADIO FREQUENCY POWERS;
SILICON OXIDE FILMS;
SILICON OXIDE THIN FILM;
TETRAMETHOXYSILANE;
THIN OXIDE FILMS;
OPTICAL FILMS;
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EID: 58149216484
PISSN: 15671739
EISSN: None
Source Type: Journal
DOI: 10.1016/j.cap.2008.05.011 Document Type: Article |
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Times cited : (21)
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References (39)
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