Effects of the oxygen fraction and substrate bias power on the electrical and optical properties of silicon oxide films by plasma enhanced chemical vapour deposition using TMOS/O2 gas

Journal of Physics D: Applied Physics

Volumn 37, Issue 12, 2004, Pages 1679-1684

  Bang, S B ^a   Chung, T H ^a   Kim, Y ^a   Kang, M S ^a   Kim, J K ^a  

^a Dong A University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRIC POTENTIAL; ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; ION BOMBARDMENT; MICROELECTRONICS; NATURAL FREQUENCIES; OPTICAL PROPERTIES; OXYGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SILICA;

ELECTRICAL PROPERTIES; OXYGEN FRACTION; SPECTROSCOPIC ELLIPSOMETRY; SUBSTRATE BIAS POWER;

THIN FILMS;

EID: 3042726316     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/37/12/012     Document Type: Article

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