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Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 20, Issue 2, 2002, Pages 398-402

Cyclic plasma deposition of SiO2 films at low temperature (80 °C) with intermediate plasma treatment

(2) Yi, Chung a Rhee, Shi Woo a

a Pohang University of Science and Technology (POSTECH) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CAPACITANCE; CARBON; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; ELECTRON CYCLOTRON RESONANCE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; IMPURITIES; LEAKAGE CURRENTS; MOS DEVICES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SILICA; SILICON WAFERS; X RAY PHOTOELECTRON SPECTROSCOPY;

CYCLIC PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (CPECVD); TETRAETHYLORTHOSILICATE (TEOS);

THIN FILMS;

EID: 0036494590 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.1446447 Document Type: Article

Times cited : (12)

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