Effects of process parameters on the growth of thick SiO2 using plasma enhanced chemical vapor deposition with hexamethyldisilazane

Surface and Coatings Technology

Volumn 131, Issue 1-3, 2000, Pages 136-140

  Choi, Jin Kyung ^a   Kim, D H ^b   Lee, J ^a   Yoo, Ji Beom ^c  

^a Sungkyunkwan University   (South Korea)

^b Korea University   (South Korea)

^c NONE

Author keywords

Growth characteristics; Growth parameters; Hexamethyldisilzane; Optical properties of SiO2; Plasma enhanced chemical vapor deposition; SiO2

Indexed keywords

PLASMA TREATMENT;

EID: 0034528287     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0257-8972(00)00751-9     Document Type: Conference Paper

References (12)

1. Integrated optics