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Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 19, Issue 5, 2001, Pages 2670-2675

SiO2 films deposited on silicon at low temperature by plasma-enhanced decomposition of hexamethyldisilazane: Defect characterization

(7) Croci, S a Pecheur A b Autran, J L c Vedda, A d Caccavale, F d Martini, M d Spinolo, G d

a UNIVERSITÉ DE LYON (France)

b BP 420 (France)

c AIX MARSEILLE UNIVERSITY (France)

d UNIVERSITY OF MILANO BICOCCA (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DEFECTS; DIELECTRIC FILMS; ELECTRIC CHARGE; ETCHING; FLOW MEASUREMENT; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SATURATION (MATERIALS COMPOSITION); SECONDARY ION MASS SPECTROMETRY; THERMOLUMINESCENCE; VOLTAGE MEASUREMENT;

PRECURSORS;

SILICA;

EID: 0035526802 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.1399317 Document Type: Article

Times cited : (10)

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