Electrical properties of bulk silicon dioxide and SiO2/Si interface formed by tetraethylorthosilicate (TEOS)-oxygen plasma enhanced chemical vapor deposition

Journal of Materials Science: Materials in Electronics

Volumn 11, Issue 8, 2000, Pages 579-586

  Kim, Hyo Uk ^a   Rhee, Shi Woo ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; FILM GROWTH; GLOW DISCHARGES; OXYGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA; SILICON; THERMAL EFFECTS;

OXIDE FILMS;

INTERFACES (MATERIALS);

EID: 0034314310     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1008968426486     Document Type: Article

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